JPS6351630A - シリコン基板への電極形成法 - Google Patents

シリコン基板への電極形成法

Info

Publication number
JPS6351630A
JPS6351630A JP61194048A JP19404886A JPS6351630A JP S6351630 A JPS6351630 A JP S6351630A JP 61194048 A JP61194048 A JP 61194048A JP 19404886 A JP19404886 A JP 19404886A JP S6351630 A JPS6351630 A JP S6351630A
Authority
JP
Japan
Prior art keywords
base metal
silicon substrate
evaporation source
source supply
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61194048A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0581050B2 (da
Inventor
Kinji Sugiyama
欣二 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP61194048A priority Critical patent/JPS6351630A/ja
Publication of JPS6351630A publication Critical patent/JPS6351630A/ja
Publication of JPH0581050B2 publication Critical patent/JPH0581050B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP61194048A 1986-08-21 1986-08-21 シリコン基板への電極形成法 Granted JPS6351630A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61194048A JPS6351630A (ja) 1986-08-21 1986-08-21 シリコン基板への電極形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61194048A JPS6351630A (ja) 1986-08-21 1986-08-21 シリコン基板への電極形成法

Publications (2)

Publication Number Publication Date
JPS6351630A true JPS6351630A (ja) 1988-03-04
JPH0581050B2 JPH0581050B2 (da) 1993-11-11

Family

ID=16318075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61194048A Granted JPS6351630A (ja) 1986-08-21 1986-08-21 シリコン基板への電極形成法

Country Status (1)

Country Link
JP (1) JPS6351630A (da)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5231053A (en) * 1990-12-27 1993-07-27 Intel Corporation Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device
US5488014A (en) * 1990-08-28 1996-01-30 Mitsubishi Denki Kabushiki Kaisha Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor
JP2001189473A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 光起電力素子及びその製造方法
KR100458294B1 (ko) * 1997-12-30 2005-02-23 주식회사 하이닉스반도체 반도체소자의장벽금속층형성방법
WO2013149481A1 (zh) * 2012-04-05 2013-10-10 中国科学院微电子研究所 一种常压等离子体自由基清洗系统
JP2014500620A (ja) * 2010-11-10 2014-01-09 クリー インコーポレイテッド コンタクトパッドおよびその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142633A (en) * 1980-04-08 1981-11-07 Mitsubishi Electric Corp Forming method for back electrode of semiconductor wafer
JPS58102521A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体装置の製造方法
JPS58158918A (ja) * 1982-03-16 1983-09-21 Nippon Telegr & Teleph Corp <Ntt> 金属窒化物薄膜の製造方法
JPS59208727A (ja) * 1983-05-12 1984-11-27 Mitsubishi Electric Corp プラズマエツチング装置
JPS605560A (ja) * 1983-06-23 1985-01-12 Fujitsu Ltd 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142633A (en) * 1980-04-08 1981-11-07 Mitsubishi Electric Corp Forming method for back electrode of semiconductor wafer
JPS58102521A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体装置の製造方法
JPS58158918A (ja) * 1982-03-16 1983-09-21 Nippon Telegr & Teleph Corp <Ntt> 金属窒化物薄膜の製造方法
JPS59208727A (ja) * 1983-05-12 1984-11-27 Mitsubishi Electric Corp プラズマエツチング装置
JPS605560A (ja) * 1983-06-23 1985-01-12 Fujitsu Ltd 半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5488014A (en) * 1990-08-28 1996-01-30 Mitsubishi Denki Kabushiki Kaisha Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor
US5231053A (en) * 1990-12-27 1993-07-27 Intel Corporation Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device
KR100458294B1 (ko) * 1997-12-30 2005-02-23 주식회사 하이닉스반도체 반도체소자의장벽금속층형성방법
JP2001189473A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 光起電力素子及びその製造方法
JP2014500620A (ja) * 2010-11-10 2014-01-09 クリー インコーポレイテッド コンタクトパッドおよびその製造方法
US9607955B2 (en) 2010-11-10 2017-03-28 Cree, Inc. Contact pad
WO2013149481A1 (zh) * 2012-04-05 2013-10-10 中国科学院微电子研究所 一种常压等离子体自由基清洗系统

Also Published As

Publication number Publication date
JPH0581050B2 (da) 1993-11-11

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