JPS6362732U - - Google Patents

Info

Publication number
JPS6362732U
JPS6362732U JP1987152130U JP15213087U JPS6362732U JP S6362732 U JPS6362732 U JP S6362732U JP 1987152130 U JP1987152130 U JP 1987152130U JP 15213087 U JP15213087 U JP 15213087U JP S6362732 U JPS6362732 U JP S6362732U
Authority
JP
Japan
Prior art keywords
radiation
detector
conductivity
low conductivity
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1987152130U
Other languages
English (en)
Other versions
JPH062282Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS6362732U publication Critical patent/JPS6362732U/ja
Application granted granted Critical
Publication of JPH062282Y2 publication Critical patent/JPH062282Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Description

【図面の簡単な説明】
図面はこの考案に基づく放射線検出器の一実施
例の断面図である。 １……放射線検出器、２，３……検出器要素、
５，６……低導電率部分、８，９……ｐ導電形領
域、１０，１１……ｎ導電形領域。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 放射線方向に相前後して配置された複数の
    検出器要素２，３を備え、放射線検出器が放射線
    方向にほぼ平行に延びる面を備えた一つの半導体
    から一体に構成され、隣接領域より低い導電率を
    有し放射線方向に直交する少なくとも一つの部分
    ５，６により、半導体が複数の検出器要素２，３
    に分割されている放射線検出器において、半導体
    が放射線方向に平行に延びるその一面上にｐ導電
    形の領域８，９を有し、また反対側の面上にｎ導
    電形の領域１０，１１を有し、これらの領域（８
    ，９又は１０，１１）のうちの少なくとも一つの
    領域が低導電率の部分（５又は６）により中断さ
    れていることを特徴とする放射線検出器。 (2) ｐ導電形領域８，９もｎ導電形領域１０，
    １１もそれぞれ低導電率部分（５又は６）により
    中断され、その際低導電率部分５，６が相対して
    配置されていることを特徴とする実用新案登録請
    求の範囲第１項記載の放射線検出器。 (3) 低導電率部分が溝５，６により構成されて
    いることを特徴とする実用新案登録請求の範囲第
    １項又は第２項記載の放射線検出器。 (4) 低導電率部分がドープされていない材料に
    より形成されていることを特徴とする実用新案登
    録請求の範囲第１項又は第２項記載の放射線検出
    器。
JP1987152130U 1986-10-06 1987-10-02 放射線検出器 Expired - Lifetime JPH062282Y2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3633998.9 1986-10-06
DE19863633998 DE3633998A1 (de) 1986-10-06 1986-10-06 Strahlendetektor

Publications (2)

Publication Number Publication Date
JPS6362732U true JPS6362732U (ja) 1988-04-25
JPH062282Y2 JPH062282Y2 (ja) 1994-01-19

Family

ID=6311156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987152130U Expired - Lifetime JPH062282Y2 (ja) 1986-10-06 1987-10-02 放射線検出器

Country Status (3)

Country Link
US (1) US4901126A (ja)
JP (1) JPH062282Y2 (ja)
DE (1) DE3633998A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434417A (en) * 1993-11-05 1995-07-18 The Regents Of The University Of California High resolution energy-sensitive digital X-ray
US5771271A (en) * 1997-04-16 1998-06-23 Infimed, Inc. Phototimer for radiology imaging
DE19804515B4 (de) * 1998-02-05 2004-05-13 Forschungszentrum Jülich GmbH Ortsauflösender γ-Detektor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3550094A (en) * 1968-04-01 1970-12-22 Gen Electric Semiconductor data storage apparatus with electron beam readout
DE1812127A1 (de) * 1968-12-02 1970-06-11 Telefunken Patent Halbleiteranordnung zum Messen ionisierender Strahlung
US3691389A (en) * 1969-06-09 1972-09-12 Ronald Ellis Radiation detector comprising semi-conductor body incorporating a two-dimensional array of p-i-n-devices
DE2239953A1 (de) * 1972-08-14 1974-02-28 Siemens Ag Detektoranordnung
DE2543065A1 (de) * 1975-09-26 1977-03-31 Siemens Ag Verfahren zum herstellen einer ortsaufloesenden detektoranordnung
FR2490875A1 (fr) * 1980-09-23 1982-03-26 Thomson Csf Photodiode comportant plusieurs elements photosensibles tres rapproches qui presentent entre eux un excellent decouplage
JPS5956773A (ja) * 1982-09-25 1984-04-02 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出素子
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
JPH0678376A (ja) * 1992-05-20 1994-03-18 Nec Corp パターン付きテレコン制御方式

Also Published As

Publication number Publication date
DE3633998A1 (de) 1988-04-14
US4901126A (en) 1990-02-13
JPH062282Y2 (ja) 1994-01-19

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