JPS636873A - 半導体装置 - Google Patents

半導体装置

Info

Publication number: JPS636873A
Authority: JP; Japan
Prior art keywords: film; gate electrode; gate; piled; added
Prior art date: 1986-06-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP14828686A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0581068B2 (de

Inventor

Shinichiro Takatani

信一郎高谷

Naoyuki Matsuoka

直之松岡

Junji Shigeta

淳二重田

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

Agency of Industrial Science and Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-06-26

Filing date

1986-06-26

Publication date

1988-01-12

1986-06-26 Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology

1986-06-26 Priority to JP14828686A priority Critical patent/JPS636873A/ja

1988-01-12 Publication of JPS636873A publication Critical patent/JPS636873A/ja

1993-11-11 Publication of JPH0581068B2 publication Critical patent/JPH0581068B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 10
229910052785 arsenic Inorganic materials 0.000 claims abstract description 18
229910052733 gallium Inorganic materials 0.000 claims abstract description 18
239000000463 material Substances 0.000 claims abstract description 14
239000000758 substrate Substances 0.000 claims abstract description 8
229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 6
229910052751 metal Inorganic materials 0.000 claims description 18
239000002184 metal Substances 0.000 claims description 18
238000002844 melting Methods 0.000 claims description 10
150000002739 metals Chemical class 0.000 claims description 10
230000008018 melting Effects 0.000 claims description 8
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 7
229910045601 alloy Inorganic materials 0.000 claims description 7
239000000956 alloy Substances 0.000 claims description 7
229910021332 silicide Inorganic materials 0.000 claims description 6
239000010937 tungsten Substances 0.000 claims description 6
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
229910052715 tantalum Inorganic materials 0.000 claims description 4
239000010936 titanium Substances 0.000 claims description 4
229910052750 molybdenum Inorganic materials 0.000 claims description 3
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
239000011733 molybdenum Substances 0.000 claims description 2
229910052702 rhenium Inorganic materials 0.000 claims description 2
WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
229910052719 titanium Inorganic materials 0.000 claims description 2
FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims 1
239000007772 electrode material Substances 0.000 abstract description 9
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
238000004519 manufacturing process Methods 0.000 abstract description 7
238000004544 sputter deposition Methods 0.000 abstract description 5
229910021342 tungsten silicide Inorganic materials 0.000 abstract description 5
238000000137 annealing Methods 0.000 abstract description 4
229910052681 coesite Inorganic materials 0.000 abstract description 4
229910052906 cristobalite Inorganic materials 0.000 abstract description 4
238000010438 heat treatment Methods 0.000 abstract description 4
150000002500 ions Chemical class 0.000 abstract description 4
238000000034 method Methods 0.000 abstract description 4
239000000377 silicon dioxide Substances 0.000 abstract description 4
235000012239 silicon dioxide Nutrition 0.000 abstract description 4
229910052682 stishovite Inorganic materials 0.000 abstract description 4
229910052905 tridymite Inorganic materials 0.000 abstract description 4
WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract description 3
238000009792 diffusion process Methods 0.000 description 5
230000000694 effects Effects 0.000 description 5
150000001875 compounds Chemical class 0.000 description 3
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
239000002253 acid Substances 0.000 description 2
150000007513 acids Chemical class 0.000 description 2
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
230000007547 defect Effects 0.000 description 2
150000004767 nitrides Chemical class 0.000 description 2
229910002601 GaN Inorganic materials 0.000 description 1
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
230000003213 activating effect Effects 0.000 description 1
GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
239000010931 gold Substances 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
229910021344 molybdenum silicide Inorganic materials 0.000 description 1
239000002244 precipitate Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1
XGZGDYQRJKMWNM-UHFFFAOYSA-N tantalum tungsten Chemical compound [Ta][W][Ta] XGZGDYQRJKMWNM-UHFFFAOYSA-N 0.000 description 1
229910021341 titanium silicide Inorganic materials 0.000 description 1
MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
-1 tungsten nitride Chemical class 0.000 description 1
230000005533 two-dimensional electron gas Effects 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1

Landscapes

Electrodes Of Semiconductors (AREA)
Junction Field-Effect Transistors (AREA)

JP14828686A 1986-06-26 1986-06-26 半導体装置 Granted JPS636873A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP14828686A JPS636873A (ja)	1986-06-26	1986-06-26	半導体装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP14828686A JPS636873A (ja)	1986-06-26	1986-06-26	半導体装置

Publications (2)

Publication Number	Publication Date
JPS636873A true JPS636873A (ja)	1988-01-12
JPH0581068B2 JPH0581068B2 (de)	1993-11-11

Family

ID=15449371

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP14828686A Granted JPS636873A (ja)	1986-06-26	1986-06-26	半導体装置

Country Status (1)

Country	Link
JP (1)	JPS636873A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63148679A (ja) *	1986-12-12	1988-06-21	Nec Corp	電極

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6081860A (ja) *	1983-10-11	1985-05-09	Matsushita Electric Ind Co Ltd	シヨツトキ−障壁半導体装置

1986
- 1986-06-26 JP JP14828686A patent/JPS636873A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6081860A (ja) *	1983-10-11	1985-05-09	Matsushita Electric Ind Co Ltd	シヨツトキ−障壁半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63148679A (ja) *	1986-12-12	1988-06-21	Nec Corp	電極

Also Published As

Publication number	Publication date
JPH0581068B2 (de)	1993-11-11

Legal Events

Date	Code	Title	Description
2006-06-26	EXPY	Cancellation because of completion of term

Publication	Publication Date	Title
US4330343A (en)	1982-05-18	Refractory passivated ion-implanted GaAs ohmic contacts
WO2009029329A1 (en)	2009-03-05	High temperature ion implantation of nitride based hemts
JPH03774B2 (de)	1991-01-08
JPH02155271A (ja)	1990-06-14	半導体装置
RU2703931C1 (ru)	2019-10-22	Способ изготовления кремниевых диодов шоттки
JP2841386B2 (ja)	1998-12-24	半導体装置およびその製造方法
JPS636873A (ja)	1988-01-12	半導体装置
JPS6390175A (ja)	1988-04-21	化合物半導体電界効果トランジスタの製造方法
JPS609120A (ja)	1985-01-18	半導体装置の製造方法
JPS58103175A (ja)	1983-06-20	半導体装置およびその製造方法
JP2000200759A (ja)	2000-07-18	半導体装置の製造方法
JPS62130567A (ja)	1987-06-12	シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法
JPS6336579A (ja)	1988-02-17	シヨツトキゲ−ト電界効果トランジスタ
JPS63304665A (ja)	1988-12-12	半導体装置
JPS6143443A (ja)	1986-03-03	半導体装置の製造方法
JPS6037780A (ja)	1985-02-27	電界効果型トランジスタの製造方法
JPH0260215B2 (de)	1990-12-14
JPS63158878A (ja)	1988-07-01	半導体装置の製造方法
JPH07105403B2 (ja)	1995-11-13	化合物半導体電界効果トランジスタのショットキゲート電極膜の形成方法
JPH0354851B2 (de)	1991-08-21
JPH01194468A (ja)	1989-08-04	オーミック電極構造
JPH07221122A (ja)	1995-08-18	ショットキゲート電界効果トランジスタとその製造方法
JPS59158565A (ja)	1984-09-08	電界効果トランジスタの製造方法
JPH0669240A (ja)	1994-03-11	半導体装置の製造方法
JPS5994415A (ja)	1984-05-31	半導体装置の製法

JPS636873A - 半導体装置 - Google Patents

Info

Links

Landscapes

Priority Applications (1)

Applications Claiming Priority (1)

Publications (2)

Family

ID=15449371

Family Applications (1)

Country Status (1)

Cited By (1)

Citations (1)

Patent Citations (1)

Cited By (1)

Also Published As

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