JPS638577B2 - - Google Patents
Info
- Publication number
- JPS638577B2 JPS638577B2 JP55098659A JP9865980A JPS638577B2 JP S638577 B2 JPS638577 B2 JP S638577B2 JP 55098659 A JP55098659 A JP 55098659A JP 9865980 A JP9865980 A JP 9865980A JP S638577 B2 JPS638577 B2 JP S638577B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ion
- raw material
- mixed
- ion current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9865980A JPS5725654A (en) | 1980-07-21 | 1980-07-21 | Method of forming ions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9865980A JPS5725654A (en) | 1980-07-21 | 1980-07-21 | Method of forming ions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5725654A JPS5725654A (en) | 1982-02-10 |
| JPS638577B2 true JPS638577B2 (da) | 1988-02-23 |
Family
ID=14225636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9865980A Granted JPS5725654A (en) | 1980-07-21 | 1980-07-21 | Method of forming ions |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5725654A (da) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766759B2 (ja) * | 1985-09-27 | 1995-07-19 | 株式会社日立製作所 | 水素イオン源 |
| JP2654004B2 (ja) * | 1985-10-31 | 1997-09-17 | ゼネラル・エレクトリック・カンパニイ | イオン注入装置及び方法 |
| US7586109B2 (en) * | 2007-01-25 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving the performance and extending the lifetime of an ion source with gas dilution |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4847890A (da) * | 1971-10-18 | 1973-07-06 | ||
| JPS534780A (en) * | 1976-07-02 | 1978-01-17 | Tsuneo Nishida | Reactionary ionic plating process |
-
1980
- 1980-07-21 JP JP9865980A patent/JPS5725654A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5725654A (en) | 1982-02-10 |
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