TW380313B - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit Download PDF

Info

Publication number: TW380313B
Authority: TW; Taiwan
Prior art keywords: aforementioned; voltage; circuit; transistor; pair
Prior art date: 1995-08-18

Application number

TW085109692A

Other languages

English (en)

Chinese (zh)

Inventor

Yukihide Suzuki

Noriaki Kubota

Koji Arai

Tsugio Takahashi

Shunichi Sukegawa

Original Assignee

Hitachi Ltd

Texas Instruments Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-08-18

Filing date

1996-08-09

Publication date

2000-01-21

1996-08-09 Application filed by Hitachi Ltd, Texas Instruments Inc filed Critical Hitachi Ltd

2000-01-21 Application granted granted Critical

2000-01-21 Publication of TW380313B publication Critical patent/TW380313B/zh

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 77
230000004913 activation Effects 0.000 claims abstract description 30
230000007246 mechanism Effects 0.000 claims abstract description 17
230000015654 memory Effects 0.000 claims description 82
230000005540 biological transmission Effects 0.000 claims description 63
230000000295 complement effect Effects 0.000 claims description 50
230000002079 cooperative effect Effects 0.000 claims description 23
239000000758 substrate Substances 0.000 claims description 21
230000008859 change Effects 0.000 claims description 12
239000013078 crystal Substances 0.000 claims description 12
230000004044 response Effects 0.000 claims description 9
230000003321 amplification Effects 0.000 claims description 7
238000003199 nucleic acid amplification method Methods 0.000 claims description 7
230000009467 reduction Effects 0.000 claims description 7
230000000875 corresponding effect Effects 0.000 claims description 5
230000000694 effects Effects 0.000 claims description 5
239000000470 constituent Substances 0.000 claims 16
239000000047 product Substances 0.000 claims 5
230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 4
230000015572 biosynthetic process Effects 0.000 claims 2
229910052701 rubidium Inorganic materials 0.000 claims 2
IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims 2
239000013589 supplement Substances 0.000 claims 2
238000000034 method Methods 0.000 abstract description 12
230000001105 regulatory effect Effects 0.000 abstract 1
230000009471 action Effects 0.000 description 20
238000005516 engineering process Methods 0.000 description 13
238000010586 diagram Methods 0.000 description 10
230000001360 synchronised effect Effects 0.000 description 9
101100476202 Caenorhabditis elegans mog-2 gene Proteins 0.000 description 7
230000002441 reversible effect Effects 0.000 description 7
230000001052 transient effect Effects 0.000 description 6
230000033001 locomotion Effects 0.000 description 5
230000003068 static effect Effects 0.000 description 5
238000012360 testing method Methods 0.000 description 5
230000003111 delayed effect Effects 0.000 description 4
238000006243 chemical reaction Methods 0.000 description 3
230000001276 controlling effect Effects 0.000 description 3
230000005284 excitation Effects 0.000 description 3
235000015170 shellfish Nutrition 0.000 description 3
239000002023 wood Substances 0.000 description 3
206010041235 Snoring Diseases 0.000 description 2
238000003491 array Methods 0.000 description 2
239000003990 capacitor Substances 0.000 description 2
230000002950 deficient Effects 0.000 description 2
230000010354 integration Effects 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
238000012856 packing Methods 0.000 description 2
230000000630 rising effect Effects 0.000 description 2
101150110971 CIN7 gene Proteins 0.000 description 1
101100290380 Caenorhabditis elegans cel-1 gene Proteins 0.000 description 1
101100508840 Daucus carota INV3 gene Proteins 0.000 description 1
101000603223 Homo sapiens Nischarin Proteins 0.000 description 1
101000616556 Homo sapiens SH3 domain-containing protein 19 Proteins 0.000 description 1
101150110298 INV1 gene Proteins 0.000 description 1
101000905241 Mus musculus Heart- and neural crest derivatives-expressed protein 1 Proteins 0.000 description 1
102100038995 Nischarin Human genes 0.000 description 1
102100021782 SH3 domain-containing protein 19 Human genes 0.000 description 1
101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
230000033228 biological regulation Effects 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
230000005611 electricity Effects 0.000 description 1
230000008030 elimination Effects 0.000 description 1
238000003379 elimination reaction Methods 0.000 description 1
238000002129 infrared reflectance spectroscopy Methods 0.000 description 1
239000010985 leather Substances 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
230000000737 periodic effect Effects 0.000 description 1
238000012545 processing Methods 0.000 description 1
238000011160 research Methods 0.000 description 1
238000012552 review Methods 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/08—Control thereof
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

Dram (AREA)

TW085109692A 1995-08-18 1996-08-09 Semiconductor integrated circuit TW380313B (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP23339195		1995-08-18
JP23339095		1995-08-18
JP8138112A JPH09120675A (ja)	1995-08-18	1996-05-31	半導体集積回路

Publications (1)

Publication Number	Publication Date
TW380313B true TW380313B (en)	2000-01-21

Family

ID=27317606

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW085109692A TW380313B (en)	1995-08-18	1996-08-09	Semiconductor integrated circuit

Country Status (3)

Country	Link
JP (1)	JPH09120675A (ja)
KR (1)	KR100417899B1 (ja)
TW (1)	TW380313B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US11183231B2 (en)	2019-11-25	2021-11-23	Piecemakers Technology, Inc.	Apparatus for enhancing prefetch access in memory module

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3853513B2 (ja) *	1998-04-09	2006-12-06	エルピーダメモリ株式会社	ダイナミック型ｒａｍ
KR100708561B1 (ko)	2000-11-09	2007-04-19	후지쯔 가부시끼가이샤	반도체 기억 장치 및 그 제어 방법
JP2002358778A (ja) *	2001-05-30	2002-12-13	Hitachi Ltd	半導体集積回路装置
KR100847760B1 (ko) *	2001-12-07	2008-07-23	주식회사 하이닉스반도체	메모리 장치 및 구동방법
JP2006252721A (ja)	2005-03-14	2006-09-21	Elpida Memory Inc	オーバードライブ期間制御装置およびオーバードライブ期間決定方法
KR100682694B1 (ko) *	2005-05-09	2007-02-15	주식회사 하이닉스반도체	반도체 메모리 장치
JP2007018648A (ja) *	2005-07-11	2007-01-25	Elpida Memory Inc	半導体装置
JP2007213637A (ja)	2006-02-07	2007-08-23	Elpida Memory Inc	内部電源生成回路及びこれらを備えた半導体装置
KR100825026B1 (ko) *	2006-06-29	2008-04-24	주식회사 하이닉스반도체	오버드라이빙 펄스발생기 및 이를 포함하는 메모리 장치
KR100866146B1 (ko) *	2007-10-11	2008-10-31	주식회사 하이닉스반도체	센스 앰프 제어 회로
JP4971970B2 (ja) *	2007-12-27	2012-07-11	ルネサスエレクトロニクス株式会社	降圧回路及び半導体装置並びに降圧回路制御方法
JP5580179B2 (ja) *	2010-11-30	2014-08-27	ピーエスフォールクスコエスエイアールエル	半導体装置
JP6842271B2 (ja) *	2016-10-07	2021-03-17	ラピスセミコンダクタ株式会社	電源回路及び半導体記憶装置
KR102909940B1 (ko)	2020-07-16	2026-01-08	에스케이하이닉스 주식회사	메모리 장치 및 이의 동작 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3122239B2 (ja) *	1992-07-23	2001-01-09	株式会社東芝	半導体集積回路
JP3321246B2 (ja) *	1993-06-08	2002-09-03	株式会社東芝	電流制御電圧発生回路

1996
- 1996-05-31 JP JP8138112A patent/JPH09120675A/ja active Pending
- 1996-08-09 KR KR1019960033142A patent/KR100417899B1/ko not_active Expired - Fee Related
- 1996-08-09 TW TW085109692A patent/TW380313B/zh not_active IP Right Cessation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US11183231B2 (en)	2019-11-25	2021-11-23	Piecemakers Technology, Inc.	Apparatus for enhancing prefetch access in memory module
TWI764344B (zh) *	2019-11-25	2022-05-11	補丁科技股份有限公司	用來在記憶體模組中增加資料預取數量的裝置

Also Published As

Publication number	Publication date
KR970012752A (ko)	1997-03-29
JPH09120675A (ja)	1997-05-06
KR100417899B1 (ko)	2004-05-12

Legal Events

Date	Code	Title	Description
2000-06-13	GD4A	Issue of patent certificate for granted invention patent
2009-02-09	MC4A	Revocation of granted patent

Publication	Publication Date	Title
KR900008936B1 (ko)	1990-12-13	Cmos 다이내믹램
JP3874234B2 (ja)	2007-01-31	半導体集積回路装置
US6459627B1 (en)	2002-10-01	Semiconductor memory device
US7738306B2 (en)	2010-06-15	Method to improve the write speed for memory products
KR101026658B1 (ko)	2011-04-04	단일-종단 감지 증폭기를 갖는 반도체 디바이스
JPH11297950A (ja)	1999-10-29	半導体集積回路装置
JPH0249516B2 (ja)	1990-10-30
US5764580A (en)	1998-06-09	Semiconductor integrated circuit
KR940003402B1 (ko)	1994-04-21	다이내믹 랜덤 억세스 메모리 디바이스
JP2004186197A (ja)	2004-07-02	半導体記憶装置及び半導体集積回路
CN100472651C (zh)	2009-03-25	半导体存储装置
JPH09120675A (ja)	1997-05-06	半導体集積回路
TW307871B (ja)	1997-06-11
JP3308572B2 (ja)	2002-07-29	半導体装置
JPH0963271A (ja)	1997-03-07	半導体記憶装置
CN1905062B (zh)	2011-11-09	铁电存储装置
US6804154B2 (en)	2004-10-12	Semiconductor memory device including power generation circuit implementing stable operation
KR0132006B1 (ko)	1998-04-14	반도체 메모리 장치
TW526603B (en)	2003-04-01	Semiconductor integrated circuit
JPH0935476A (ja)	1997-02-07	可変プレート電圧発生回路を具備する半導体メモリ装置
US20050057956A1 (en)	2005-03-17	Semiconductor integrated circuit device and operation method therefor
US5771198A (en)	1998-06-23	Source voltage generating circuit in semiconductor memory
JPH06326272A (ja)	1994-11-25	半導体記憶装置
JPH0883489A (ja)	1996-03-26	メモリ・アレイ集積回路
US6430091B2 (en)	2002-08-06	Semiconductor memory device having reduced current consumption at internal boosted potential