TWI454844B - 用於濕浸式微影之光阻組成物 - Google Patents
用於濕浸式微影之光阻組成物 Download PDFInfo
- Publication number
- TWI454844B TWI454844B TW100116799A TW100116799A TWI454844B TW I454844 B TWI454844 B TW I454844B TW 100116799 A TW100116799 A TW 100116799A TW 100116799 A TW100116799 A TW 100116799A TW I454844 B TWI454844 B TW I454844B
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist
- photoresist composition
- resins
- composition
- wet immersion
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67676205P | 2005-05-01 | 2005-05-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201140234A TW201140234A (en) | 2011-11-16 |
| TWI454844B true TWI454844B (zh) | 2014-10-01 |
Family
ID=36778362
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100116799A TWI454844B (zh) | 2005-05-01 | 2006-04-28 | 用於濕浸式微影之光阻組成物 |
| TW095115195A TWI352876B (en) | 2005-05-01 | 2006-04-28 | Photoresist composition for immersion lithography |
| TW103120981A TWI602019B (zh) | 2005-05-01 | 2006-04-28 | 用於濕浸式微影之光阻組成物 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095115195A TWI352876B (en) | 2005-05-01 | 2006-04-28 | Photoresist composition for immersion lithography |
| TW103120981A TWI602019B (zh) | 2005-05-01 | 2006-04-28 | 用於濕浸式微影之光阻組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US7968268B2 (2) |
| EP (1) | EP1720072B1 (2) |
| JP (7) | JP4737628B2 (2) |
| KR (4) | KR20060114293A (2) |
| CN (2) | CN102566323B (2) |
| TW (3) | TWI454844B (2) |
Families Citing this family (171)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI368825B (en) | 2004-07-07 | 2012-07-21 | Fujifilm Corp | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same |
| EP1720072B1 (en) * | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
| JP4796792B2 (ja) * | 2005-06-28 | 2011-10-19 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
| JP5055453B2 (ja) * | 2005-07-26 | 2012-10-24 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| JP4861767B2 (ja) | 2005-07-26 | 2012-01-25 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| JP4871549B2 (ja) * | 2005-08-29 | 2012-02-08 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| TWI403843B (zh) * | 2005-09-13 | 2013-08-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
| JP4568668B2 (ja) * | 2005-09-22 | 2010-10-27 | 富士フイルム株式会社 | 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| US7993808B2 (en) | 2005-09-30 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | TARC material for immersion watermark reduction |
| EP1795960B1 (en) * | 2005-12-09 | 2019-06-05 | Fujifilm Corporation | Positive resist composition, pattern forming method using the positive resist composition, use of the positive resit composition |
| JP4691442B2 (ja) | 2005-12-09 | 2011-06-01 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| JP4881687B2 (ja) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4881686B2 (ja) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4717640B2 (ja) | 2005-12-12 | 2011-07-06 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびレジストパターン形成方法 |
| JP4871718B2 (ja) * | 2005-12-27 | 2012-02-08 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| TWI479266B (zh) * | 2005-12-27 | 2015-04-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
| JP5114021B2 (ja) * | 2006-01-23 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法 |
| JP5114022B2 (ja) * | 2006-01-23 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法 |
| JP4937594B2 (ja) * | 2006-02-02 | 2012-05-23 | 東京応化工業株式会社 | 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法 |
| TWI440978B (zh) | 2006-02-15 | 2014-06-11 | Sumitomo Chemical Co | 化學增幅正型阻劑組合物 |
| CN101395189B (zh) | 2006-03-31 | 2013-07-17 | Jsr株式会社 | 含氟聚合物及其精制方法以及感放射线性树脂组合物 |
| US7771913B2 (en) * | 2006-04-04 | 2010-08-10 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process using the same |
| US8945808B2 (en) * | 2006-04-28 | 2015-02-03 | International Business Machines Corporation | Self-topcoating resist for photolithography |
| US7951524B2 (en) * | 2006-04-28 | 2011-05-31 | International Business Machines Corporation | Self-topcoating photoresist for photolithography |
| US8034532B2 (en) * | 2006-04-28 | 2011-10-11 | International Business Machines Corporation | High contact angle topcoat material and use thereof in lithography process |
| WO2008021291A2 (en) * | 2006-08-14 | 2008-02-21 | E. I. Du Pont De Nemours And Company | Fluorinated polymers for use in immersion lithography |
| JP4866688B2 (ja) * | 2006-09-04 | 2012-02-01 | 富士フイルム株式会社 | ポジ型レジスト組成物、該ポジ型レジスト組成物に用いられる樹脂、該樹脂の合成に用いられる化合物及び該ポジ型レジスト組成物を用いたパターン形成方法 |
| US8518628B2 (en) * | 2006-09-22 | 2013-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface switchable photoresist |
| US20080084549A1 (en) * | 2006-10-09 | 2008-04-10 | Rottmayer Robert E | High refractive index media for immersion lithography and method of immersion lithography using same |
| JP4849267B2 (ja) * | 2006-10-17 | 2012-01-11 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| US8900788B2 (en) | 2006-10-18 | 2014-12-02 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition for immersion exposure and method of forming resist pattern |
| CN102253596B (zh) * | 2006-10-30 | 2014-05-14 | 罗门哈斯电子材料有限公司 | 浸渍平版印刷用组合物和浸渍平版印刷方法 |
| US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| US8530148B2 (en) | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
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| TW200848935A (en) * | 2007-02-08 | 2008-12-16 | Fujifilm Electronic Materials | Photosensitive compositions employing silicon-containing additives |
| TWI374478B (en) | 2007-02-13 | 2012-10-11 | Rohm & Haas Elect Mat | Electronic device manufacture |
| JP4809378B2 (ja) * | 2007-03-13 | 2011-11-09 | 信越化学工業株式会社 | レジスト下層膜材料およびこれを用いたパターン形成方法 |
| EP1970760B1 (en) | 2007-03-14 | 2012-12-26 | FUJIFILM Corporation | Positive resist composition containing a resin for hydrophobilizing resist surface, method for production thereof |
| JP5110077B2 (ja) * | 2007-03-14 | 2012-12-26 | 富士通株式会社 | レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 |
| WO2008111203A1 (ja) | 2007-03-14 | 2008-09-18 | Fujitsu Limited | レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 |
| JP5186255B2 (ja) | 2007-03-20 | 2013-04-17 | 富士フイルム株式会社 | レジスト表面疎水化用樹脂、その製造方法及び該樹脂を含有するポジ型レジスト組成物 |
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| US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
| US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
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| JP4617337B2 (ja) | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
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| JP2009053688A (ja) * | 2007-07-30 | 2009-03-12 | Fujifilm Corp | ポジ型レジスト組成物及びパターン形成方法 |
| US20090042148A1 (en) * | 2007-08-06 | 2009-02-12 | Munirathna Padmanaban | Photoresist Composition for Deep UV and Process Thereof |
| JP5045314B2 (ja) * | 2007-08-30 | 2012-10-10 | 富士通株式会社 | 液浸露光用レジスト組成物、及びそれを用いた半導体装置の製造方法 |
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| US8084193B2 (en) * | 2008-07-12 | 2011-12-27 | International Business Machines Corporation | Self-segregating multilayer imaging stack with built-in antireflective properties |
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