ATE99842T1 - Laserstrahlerzeuger fuer eine roentgenstrahllithographie-vorrichtung. - Google Patents

Laserstrahlerzeuger fuer eine roentgenstrahllithographie-vorrichtung.

Info

Publication number
ATE99842T1
ATE99842T1 AT87303260T AT87303260T ATE99842T1 AT E99842 T1 ATE99842 T1 AT E99842T1 AT 87303260 T AT87303260 T AT 87303260T AT 87303260 T AT87303260 T AT 87303260T AT E99842 T1 ATE99842 T1 AT E99842T1
Authority
AT
Austria
Prior art keywords
wafer
laser beam
target
laser
amplifier
Prior art date
Application number
AT87303260T
Other languages
English (en)
Inventor
Joseph A Abate
Thomas L Duft
James M Forsyth
John F Hoose
Robert Z Zambelli
Malcolm M Drummond
Original Assignee
Hampshire Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hampshire Instr Inc filed Critical Hampshire Instr Inc
Application granted granted Critical
Publication of ATE99842T1 publication Critical patent/ATE99842T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21B—FUSION REACTORS
    • G21B1/00—Thermonuclear fusion reactors
    • G21B1/11—Details
    • G21B1/23—Optical systems, e.g. for irradiating targets, for heating plasma or for plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2316—Cascaded amplifiers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Library & Information Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
  • X-Ray Techniques (AREA)
AT87303260T 1986-04-15 1987-04-14 Laserstrahlerzeuger fuer eine roentgenstrahllithographie-vorrichtung. ATE99842T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85210886A 1986-04-15 1986-04-15
EP87303260A EP0242178B1 (de) 1986-04-15 1987-04-14 Laserstrahlerzeuger für eine Röntgenstrahllithographie-Vorrichtung

Publications (1)

Publication Number Publication Date
ATE99842T1 true ATE99842T1 (de) 1994-01-15

Family

ID=25312514

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87303260T ATE99842T1 (de) 1986-04-15 1987-04-14 Laserstrahlerzeuger fuer eine roentgenstrahllithographie-vorrichtung.

Country Status (5)

Country Link
EP (1) EP0242178B1 (de)
JP (4) JPH0797679B2 (de)
KR (1) KR940000696B1 (de)
AT (1) ATE99842T1 (de)
DE (1) DE3788668T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770457B2 (ja) * 1986-10-17 1995-07-31 株式会社日立製作所 Ｘ線露光方法、及びそれに用いられるｘ線発生源
AU2001259331A1 (en) 2000-05-03 2001-11-12 Silicon Valley Group Inc Non-contact seal using purge gas
US6852988B2 (en) 2000-11-28 2005-02-08 Sumitomo Heavy Industries, Ltd. Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects
EP1510867A1 (de) 2003-08-29 2005-03-02 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US7432517B2 (en) 2004-11-19 2008-10-07 Asml Netherlands B.V. Pulse modifier, lithographic apparatus, and device manufacturing method
US8344339B2 (en) * 2010-08-30 2013-01-01 Media Lario S.R.L. Source-collector module with GIC mirror and tin rod EUV LPP target system
EP3332899B1 (de) 2015-08-03 2021-11-24 Tungaloy Corporation Beschichtetes schneidwerkzeug
WO2024018678A1 (ja) * 2022-07-22 2024-01-25 株式会社ジャムコ 紫外線照射装置、紫外線照射装置の制御方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3633126A (en) * 1969-04-17 1972-01-04 Gen Electric Multiple internal reflection face-pumped laser
JPS5764928A (en) * 1980-10-07 1982-04-20 Nippon Kogaku Kk <Nikon> Carrying apparatus for photo mask or reticle
JPS57194531A (en) * 1981-05-26 1982-11-30 Toshiba Corp Electron beam transfer device
WO1983003674A1 (en) * 1982-04-14 1983-10-27 Battelle Development Corp Providing x-rays
JPS5969925A (ja) * 1982-10-15 1984-04-20 Hitachi Ltd ウエハハンドリング装置
EP0121969A3 (de) * 1983-03-15 1988-01-20 Micronix Partners Lithographisches System
US4549144A (en) * 1983-08-31 1985-10-22 The United States Of America As Represented By The United States Department Of Energy Reflex ring laser amplifier system
JPS6140029A (ja) * 1984-07-31 1986-02-26 Sokueishiya Kk 自動マスク・ウェーハ目合せ焼付方法
JPS6155653A (ja) * 1984-08-28 1986-03-20 Canon Inc 焼付装置

Also Published As

Publication number Publication date
DE3788668D1 (de) 1994-02-17
DE3788668T2 (de) 1994-08-11
JPS62273728A (ja) 1987-11-27
JPH0482176B2 (de) 1992-12-25
JPH0482177B2 (de) 1992-12-25
EP0242178B1 (de) 1994-01-05
JPS62273729A (ja) 1987-11-27
JPS62272534A (ja) 1987-11-26
JPS62273727A (ja) 1987-11-27
EP0242178A2 (de) 1987-10-21
KR940000696B1 (ko) 1994-01-27
JPH0797679B2 (ja) 1995-10-18
KR880013274A (ko) 1988-11-30
EP0242178A3 (en) 1989-07-26
JPH0616484B2 (ja) 1994-03-02

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties