JPH01230238A - ドライエッチング方法 - Google Patents

ドライエッチング方法

Info

Publication number: JPH01230238A
Authority: JP; Japan
Prior art keywords: etching; film; thermal oxide; oxide film; semiconductor substrate
Prior art date: 1989-01-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP1638289A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0547977B2 (fr

Inventor

Jun Kanamori

金森　順

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Oki Electric Industry Co Ltd

Original Assignee

Oki Electric Industry Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-01-27

Filing date

1989-01-27

Publication date

1989-09-13

1989-01-27 Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd

1989-01-27 Priority to JP1638289A priority Critical patent/JPH01230238A/ja

1989-09-13 Publication of JPH01230238A publication Critical patent/JPH01230238A/ja

1993-07-20 Publication of JPH0547977B2 publication Critical patent/JPH0547977B2/ja

Status Granted legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims description 23
238000001312 dry etching Methods 0.000 title claims description 16
238000005530 etching Methods 0.000 claims abstract description 63
239000000758 substrate Substances 0.000 claims abstract description 20
239000004065 semiconductor Substances 0.000 claims abstract description 16
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 abstract description 2
230000000694 effects Effects 0.000 abstract description 2
239000007789 gas Substances 0.000 description 12
230000005684 electric field Effects 0.000 description 5
229920002120 photoresistant polymer Polymers 0.000 description 4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
238000005468 ion implantation Methods 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
238000010586 diagram Methods 0.000 description 2
229940096118 ella Drugs 0.000 description 2
OOLLAFOLCSJHRE-ZHAKMVSLSA-N ulipristal acetate Chemical compound C1=CC(N(C)C)=CC=C1[C@@H]1C2=C3CCC(=O)C=C3CC[C@H]2[C@H](CC[C@]2(OC(C)=O)C(C)=O)[C@]2(C)C1 OOLLAFOLCSJHRE-ZHAKMVSLSA-N 0.000 description 2
238000001947 vapour-phase growth Methods 0.000 description 2
235000012431 wafers Nutrition 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
239000007853 buffer solution Substances 0.000 description 1
239000002131 composite material Substances 0.000 description 1
239000012535 impurity Substances 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
210000003127 knee Anatomy 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000003595 mist Substances 0.000 description 1
238000000059 patterning Methods 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
239000000243 solution Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Landscapes

Drying Of Semiconductors (AREA)

JP1638289A 1989-01-27 1989-01-27 ドライエッチング方法 Granted JPH01230238A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP1638289A JPH01230238A (ja)	1989-01-27	1989-01-27	ドライエッチング方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP1638289A JPH01230238A (ja)	1989-01-27	1989-01-27	ドライエッチング方法

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
JP56049266A Division JPS57164529A (en)	1981-04-03	1981-04-03	Dry etching method

Publications (2)

Publication Number	Publication Date
JPH01230238A true JPH01230238A (ja)	1989-09-13
JPH0547977B2 JPH0547977B2 (fr)	1993-07-20

Family

ID=11914731

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP1638289A Granted JPH01230238A (ja)	1989-01-27	1989-01-27	ドライエッチング方法

Country Status (1)

Country	Link
JP (1)	JPH01230238A (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5480685A (en) *	1977-12-09	1979-06-27	Chiyou Uru Esu Ai Gijiyutsu Ke	Dry etching method

1989
- 1989-01-27 JP JP1638289A patent/JPH01230238A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5480685A (en) *	1977-12-09	1979-06-27	Chiyou Uru Esu Ai Gijiyutsu Ke	Dry etching method

Also Published As

Publication number	Publication date
JPH0547977B2 (fr)	1993-07-20

Similar Documents

Publication	Publication Date	Title
US4764245A (en)	1988-08-16	Method for generating contact holes with beveled sidewalls in intermediate oxide layers
US4182646A (en)	1980-01-08	Process of etching with plasma etch gas
JPH04130723A (ja)	1992-05-01	リアクティブイオンエッチング装置及びプラズマプロセス装置
JPS63117423A (ja)	1988-05-21	二酸化シリコンのエツチング方法
JP3094470B2 (ja)	2000-10-03	ドライエッチング方法
JPH01230238A (ja)	1989-09-13	ドライエッチング方法
JPH0160939B2 (fr)	1989-12-26
JPS6043829A (ja)	1985-03-08	ドライエッチング方法
JPS6328995B2 (fr)	1988-06-10
JPS59167021A (ja)	1984-09-20	半導体装置の製造方法
JPH03129821A (ja)	1991-06-03	半導体装置の製造方法
JP3000593B2 (ja)	2000-01-17	エッチング方法
JP2600839B2 (ja)	1997-04-16	窒化シリコン膜のエッチング方法
JPH03155621A (ja)	1991-07-03	ドライエッチング方法
JPH0817170B2 (ja)	1996-02-21	半導体装置のエッチング方法
JPS62106629A (ja)	1987-05-18	半導体装置の製造方法
JPH0353521A (ja)	1991-03-07	半導体装置の製造方法
JPH0451520A (ja)	1992-02-20	半導体装置の製造方法
JPS6230268B2 (fr)	1987-07-01
JPS6353928A (ja)	1988-03-08	ドライエツチング方法
JPH0220021A (ja)	1990-01-23	半導体装置の制造方法
JPS5846637A (ja)	1983-03-18	反応性イオンエツチング方法
JPH04278535A (ja)	1992-10-05	配線形成方法
JP3392921B2 (ja)	2003-03-31	乾式エッチング工程後のシリコン基板の表面処理方法
JPH0374844A (ja)	1991-03-29	プラズマエッチング方法