JPH0415831U - - Google Patents

Info

Publication number
JPH0415831U
JPH0415831U JP1990057827U JP5782790U JPH0415831U JP H0415831 U JPH0415831 U JP H0415831U JP 1990057827 U JP1990057827 U JP 1990057827U JP 5782790 U JP5782790 U JP 5782790U JP H0415831 U JPH0415831 U JP H0415831U
Authority
JP
Japan
Prior art keywords
wafer
vapor deposition
deposition material
chamber
planetar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990057827U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990057827U priority Critical patent/JPH0415831U/ja
Publication of JPH0415831U publication Critical patent/JPH0415831U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【図面の簡単な説明】
第２図は、本考案により形成した素子の断面図
、第１図は本考案の実施例を示す真空蒸着機のチ
ヤンバ内の概念断面図、第３図は従来の蒸着機に
より形成した素子の断面図、第４図は従来の蒸着
機のチヤンバ内概念断面図である。 １……化合物半導体基板、２……保護膜、３…
…ゲート電極、４……理想のゲート電極、５……
マスク、６……蒸着物、７……プラネタ、８……
ウエーハ、９……ソース（蒸着材料）、９ｖ……
ソース容器。

Claims (1)

  1. 【実用新案登録請求の範囲】 チヤンバ内でウエーハをプラネタへ取付けおて
    おき、蒸着材料を上記ウエーハへ真空蒸着させる
    装置において、 上記蒸着材料を収容するソース容器を左右ある
    いは斜方状に可動とすることを特徴とする真空蒸
    着装置。
JP1990057827U 1990-05-30 1990-05-30 Pending JPH0415831U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990057827U JPH0415831U (ja) 1990-05-30 1990-05-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990057827U JPH0415831U (ja) 1990-05-30 1990-05-30

Publications (1)

Publication Number Publication Date
JPH0415831U true JPH0415831U (ja) 1992-02-07

Family

ID=31582889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990057827U Pending JPH0415831U (ja) 1990-05-30 1990-05-30

Country Status (1)

Country Link
JP (1) JPH0415831U (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202349A (ja) * 1993-12-14 1995-08-04 Korea Electron Telecommun Ｍｂｅ材結晶成長の分子線回折を利用した量子細線レーザーダイオードの製造方法
KR100934073B1 (ko) * 2002-07-04 2009-12-24 독키 가부시키가이샤 증착장치 및 박막제작방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215566B2 (ja) * 1976-10-19 1987-04-08 Kao Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215566B2 (ja) * 1976-10-19 1987-04-08 Kao Corp

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202349A (ja) * 1993-12-14 1995-08-04 Korea Electron Telecommun Ｍｂｅ材結晶成長の分子線回折を利用した量子細線レーザーダイオードの製造方法
KR100934073B1 (ko) * 2002-07-04 2009-12-24 독키 가부시키가이샤 증착장치 및 박막제작방법

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