JPS64770A - Compound semiconductor integrated circuit - Google Patents

Compound semiconductor integrated circuit

Info

Publication number: JPS64770A
Authority: JP; Japan
Prior art keywords: fet; film; compound semiconductor; deposited; rear surface
Prior art date: 1987-03-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP62064015A

Other languages

English (en)

Other versions

JPH01770A (ja

Inventor

Mikio Kanamori

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

Agency of Industrial Science and Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-03-20

Filing date

1987-03-20

Publication date

1989-01-05

1987-03-20 Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology

1987-03-20 Priority to JP62064015A priority Critical patent/JPS64770A/ja

1989-01-05 Publication of JPH01770A publication Critical patent/JPH01770A/ja

1989-01-05 Publication of JPS64770A publication Critical patent/JPS64770A/ja

Status Pending legal-status Critical Current

Links

150000001875 compounds Chemical class 0.000 title abstract 2
239000004065 semiconductor Substances 0.000 title abstract 2
239000000758 substrate Substances 0.000 abstract 3
229910052751 metal Inorganic materials 0.000 abstract 2
239000002184 metal Substances 0.000 abstract 2
238000004544 sputter deposition Methods 0.000 abstract 2
229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
238000000137 annealing Methods 0.000 abstract 1
230000005669 field effect Effects 0.000 abstract 1
150000002500 ions Chemical class 0.000 abstract 1
238000004519 manufacturing process Methods 0.000 abstract 1
WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract 1
229910021342 tungsten silicide Inorganic materials 0.000 abstract 1

Landscapes

Junction Field-Effect Transistors (AREA)

JP62064015A 1987-03-20 1987-03-20 Compound semiconductor integrated circuit Pending JPS64770A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP62064015A JPS64770A (en)	1987-03-20	1987-03-20	Compound semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62064015A JPS64770A (en)	1987-03-20	1987-03-20	Compound semiconductor integrated circuit

Publications (2)

Publication Number	Publication Date
JPH01770A JPH01770A (ja)	1989-01-05
JPS64770A true JPS64770A (en)	1989-01-05

Family

ID=13245920

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62064015A Pending JPS64770A (en)	1987-03-20	1987-03-20	Compound semiconductor integrated circuit

Country Status (1)

Country	Link
JP (1)	JPS64770A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01273359A (ja) *	1988-04-26	1989-11-01	Nec Corp	半導体集積回路
US6278141B1 (en)	1998-07-21	2001-08-21	Fujitsu Limited	Enhancement-mode semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58145168A (ja) *	1982-02-24	1983-08-29	Fujitsu Ltd	半導体装置
JPS5923566A (ja) *	1982-07-30	1984-02-07	Hitachi Ltd	砒化ガリウム半導体装置
JPS5979577A (ja) *	1982-10-29	1984-05-08	Fujitsu Ltd	半導体集積回路装置
JPS60176276A (ja) *	1984-02-22	1985-09-10	Nec Corp	ガリウム砒素集積回路
JPS61115347A (ja) *	1984-11-10	1986-06-02	Fujitsu Ltd	相補型電界効果半導体装置
JPS61129878A (ja) *	1984-11-29	1986-06-17	Fujitsu Ltd	半導体装置
JPS61268070A (ja) *	1984-11-29	1986-11-27	Fujitsu Ltd	半導体装置

1987
- 1987-03-20 JP JP62064015A patent/JPS64770A/ja active Pending

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58145168A (ja) *	1982-02-24	1983-08-29	Fujitsu Ltd	半導体装置
JPS5923566A (ja) *	1982-07-30	1984-02-07	Hitachi Ltd	砒化ガリウム半導体装置
JPS5979577A (ja) *	1982-10-29	1984-05-08	Fujitsu Ltd	半導体集積回路装置
JPS60176276A (ja) *	1984-02-22	1985-09-10	Nec Corp	ガリウム砒素集積回路
JPS61115347A (ja) *	1984-11-10	1986-06-02	Fujitsu Ltd	相補型電界効果半導体装置
JPS61129878A (ja) *	1984-11-29	1986-06-17	Fujitsu Ltd	半導体装置
JPS61268070A (ja) *	1984-11-29	1986-11-27	Fujitsu Ltd	半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01273359A (ja) *	1988-04-26	1989-11-01	Nec Corp	半導体集積回路
US6278141B1 (en)	1998-07-21	2001-08-21	Fujitsu Limited	Enhancement-mode semiconductor device

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