ATE400060T1 - Verbessertes abscheidungsverfahren von halbleiterschichten - Google Patents

Verbessertes abscheidungsverfahren von halbleiterschichten

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Publication number
ATE400060T1
ATE400060T1 AT02706308T AT02706308T ATE400060T1 AT E400060 T1 ATE400060 T1 AT E400060T1 AT 02706308 T AT02706308 T AT 02706308T AT 02706308 T AT02706308 T AT 02706308T AT E400060 T1 ATE400060 T1 AT E400060T1
Authority
AT
Austria
Prior art keywords
deposition process
semiconductor layers
films
improved deposition
thin films
Prior art date
Application number
AT02706308T
Other languages
English (en)
Inventor
Michael Todd
Original Assignee
Asm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Inc filed Critical Asm Inc
Application granted granted Critical
Publication of ATE400060T1 publication Critical patent/ATE400060T1/de

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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • B82—NANOTECHNOLOGY
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    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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