FR2801423B1 - Dispositif semi-conducteur a structure rayonnante, procede de fabrication d'un dispositif semi-conducteur et procede de fabrication d'un instrument electronique - Google Patents

Dispositif semi-conducteur a structure rayonnante, procede de fabrication d'un dispositif semi-conducteur et procede de fabrication d'un instrument electronique

Info

Publication number
FR2801423B1
FR2801423B1 FR0015130A FR0015130A FR2801423B1 FR 2801423 B1 FR2801423 B1 FR 2801423B1 FR 0015130 A FR0015130 A FR 0015130A FR 0015130 A FR0015130 A FR 0015130A FR 2801423 B1 FR2801423 B1 FR 2801423B1
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing
electronic instrument
radiation members
semiconductor chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0015130A
Other languages
English (en)
Other versions
FR2801423A1 (fr
Inventor
Kuniaki Mamitsu
Yasuyoshi Hirai
Kazuhito Nomura
Yutaka Fukuda
Kazuo Kajimoto
Takeshi Miyajima
Tomoatsu Makino
Yoshimi Nakase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33311999A external-priority patent/JP3525832B2/ja
Priority claimed from JP33312499A external-priority patent/JP3596388B2/ja
Priority claimed from JP2000088579A external-priority patent/JP3614079B2/ja
Priority claimed from JP2000097912A external-priority patent/JP3620399B2/ja
Priority claimed from JP2000097911A external-priority patent/JP3630070B2/ja
Priority claimed from JP2000305228A external-priority patent/JP3601432B2/ja
Application filed by Denso Corp filed Critical Denso Corp
Publication of FR2801423A1 publication Critical patent/FR2801423A1/fr
Application granted granted Critical
Publication of FR2801423B1 publication Critical patent/FR2801423B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611—Bolts or screws
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/347—Dispositions of multiple die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/865—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/764—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
FR0015130A 1999-11-24 2000-11-23 Dispositif semi-conducteur a structure rayonnante, procede de fabrication d'un dispositif semi-conducteur et procede de fabrication d'un instrument electronique Expired - Lifetime FR2801423B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP33311999A JP3525832B2 (ja) 1999-11-24 1999-11-24 半導体装置
JP33312499A JP3596388B2 (ja) 1999-11-24 1999-11-24 半導体装置
JP2000088579A JP3614079B2 (ja) 2000-03-24 2000-03-24 半導体装置及びその製造方法
JP2000097912A JP3620399B2 (ja) 2000-03-30 2000-03-30 電気機器の製造方法
JP2000097911A JP3630070B2 (ja) 2000-03-30 2000-03-30 半導体チップおよび半導体装置
JP2000305228A JP3601432B2 (ja) 2000-10-04 2000-10-04 半導体装置

Publications (2)

Publication Number Publication Date
FR2801423A1 FR2801423A1 (fr) 2001-05-25
FR2801423B1 true FR2801423B1 (fr) 2004-04-23

Family

ID=27554635

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0015130A Expired - Lifetime FR2801423B1 (fr) 1999-11-24 2000-11-23 Dispositif semi-conducteur a structure rayonnante, procede de fabrication d'un dispositif semi-conducteur et procede de fabrication d'un instrument electronique

Country Status (3)

Country Link
US (9) US6703707B1 (fr)
DE (6) DE10066442B4 (fr)
FR (1) FR2801423B1 (fr)

Families Citing this family (170)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6949824B1 (en) * 2000-04-12 2005-09-27 Micron Technology, Inc. Internal package heat dissipator
JP4479121B2 (ja) * 2001-04-25 2010-06-09 株式会社デンソー 半導体装置の製造方法
US6635513B2 (en) * 2001-05-29 2003-10-21 Hewlett-Packard Development Company, L.P. Pre-curved spring bolster plate
US7145254B2 (en) * 2001-07-26 2006-12-05 Denso Corporation Transfer-molded power device and method for manufacturing transfer-molded power device
DE10142971A1 (de) * 2001-09-01 2003-03-27 Eupec Gmbh & Co Kg Leistungshalbleitermodul
JP3627738B2 (ja) * 2001-12-27 2005-03-09 株式会社デンソー 半導体装置
DE10200066A1 (de) * 2002-01-03 2003-07-17 Siemens Ag Leistungselektronikeinheit
JP3850739B2 (ja) * 2002-02-21 2006-11-29 三菱電機株式会社 半導体装置
JP3673776B2 (ja) * 2002-07-03 2005-07-20 株式会社日立製作所 半導体モジュール及び電力変換装置
EP1389802A1 (fr) * 2002-08-16 2004-02-18 ABB Schweiz AG Couche de protection pour une plaquette de contact intermediaire d'un module à semi-conducteur de puissance
JP2004200346A (ja) * 2002-12-18 2004-07-15 Sumitomo Electric Ind Ltd 半導体素子収納用パッケージ、その製造方法及び半導体装置
JP3879688B2 (ja) * 2003-03-26 2007-02-14 株式会社デンソー 半導体装置
JP4120876B2 (ja) * 2003-05-26 2008-07-16 株式会社デンソー 半導体装置
US7193326B2 (en) * 2003-06-23 2007-03-20 Denso Corporation Mold type semiconductor device
JP3759131B2 (ja) * 2003-07-31 2006-03-22 Ｎｅｃエレクトロニクス株式会社 リードレスパッケージ型半導体装置とその製造方法
EP1657806B1 (fr) * 2003-08-21 2011-11-30 Denso Corporation Convertisseur de puissance et structure de montage de dispositif a semi-conducteur
JP4594237B2 (ja) * 2003-09-04 2010-12-08 パナソニック株式会社 半導体装置
JP2005117009A (ja) * 2003-09-17 2005-04-28 Denso Corp 半導体装置およびその製造方法
US7239016B2 (en) * 2003-10-09 2007-07-03 Denso Corporation Semiconductor device having heat radiation plate and bonding member
JP3750680B2 (ja) * 2003-10-10 2006-03-01 株式会社デンソー パッケージ型半導体装置
JP2005136264A (ja) * 2003-10-31 2005-05-26 Mitsubishi Electric Corp 電力用半導体装置及び電力用半導体モジュール
CN1332442C (zh) * 2003-11-21 2007-08-15 株式会社电装 具有一对散热片的半导体装置
JP4254527B2 (ja) * 2003-12-24 2009-04-15 株式会社デンソー 半導体装置
JP4491244B2 (ja) * 2004-01-07 2010-06-30 三菱電機株式会社 電力半導体装置
JP2005203548A (ja) * 2004-01-15 2005-07-28 Honda Motor Co Ltd 半導体装置のモジュール構造
JP2005217072A (ja) * 2004-01-28 2005-08-11 Renesas Technology Corp 半導体装置
JP4302607B2 (ja) * 2004-01-30 2009-07-29 株式会社デンソー 半導体装置
JP2005251784A (ja) * 2004-03-01 2005-09-15 Renesas Technology Corp 半導体モジュールおよびその製造方法
DE102004018477B4 (de) * 2004-04-16 2008-08-21 Infineon Technologies Ag Halbleitermodul
DE102004019442A1 (de) * 2004-04-19 2005-10-06 Siemens Ag An planarer Verbindung angeordneter Kühlkörper
DE102004019435A1 (de) * 2004-04-19 2005-11-03 Siemens Ag An einer Kühlrippe angeordnetes Bauelement
JP4158738B2 (ja) * 2004-04-20 2008-10-01 株式会社デンソー 半導体モジュール実装構造、カード状半導体モジュール及びカード状半導体モジュール密着用受熱部材
DE102004031592A1 (de) * 2004-06-30 2006-02-09 Robert Bosch Gmbh Elektronikmodulanordnung und entsprechendes Herstellungsverfahren
TWI259566B (en) * 2004-08-31 2006-08-01 Via Tech Inc Exposed heatsink type semiconductor package and manufacture process thereof
JP4604641B2 (ja) * 2004-10-18 2011-01-05 株式会社デンソー 半導体装置
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
JP4338620B2 (ja) * 2004-11-01 2009-10-07 三菱電機株式会社 半導体装置及びその製造方法
US8125781B2 (en) * 2004-11-11 2012-02-28 Denso Corporation Semiconductor device
EP1672692B1 (fr) * 2004-12-16 2015-01-07 ABB Research Ltd Module semiconducteur de puissance
US7696532B2 (en) * 2004-12-16 2010-04-13 Abb Research Ltd Power semiconductor module
DE102005001151B4 (de) * 2005-01-10 2012-04-19 Infineon Technologies Ag Bauelementanordnung zur Serienschaltung bei Hochspannungsanwendungen
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
JP4581885B2 (ja) 2005-07-22 2010-11-17 株式会社デンソー 半導体装置
US20070075419A1 (en) * 2005-09-06 2007-04-05 Denso Corporation Semiconductor device having metallic lead and electronic device having lead frame
JP4395775B2 (ja) 2005-10-05 2010-01-13 ソニー株式会社 半導体装置及びその製造方法
US7508067B2 (en) * 2005-10-13 2009-03-24 Denso Corporation Semiconductor insulation structure
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7786555B2 (en) * 2005-10-20 2010-08-31 Diodes, Incorporated Semiconductor devices with multiple heat sinks
JP4450230B2 (ja) * 2005-12-26 2010-04-14 株式会社デンソー 半導体装置
DE102006006425B4 (de) * 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung
DE102006006424B4 (de) * 2006-02-13 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren
DE102006013017B4 (de) * 2006-03-20 2014-11-06 R. Stahl Schaltgeräte GmbH Gehäuse mit Wärmebrücke
JP2007251076A (ja) * 2006-03-20 2007-09-27 Hitachi Ltd パワー半導体モジュール
JP2007300059A (ja) * 2006-04-03 2007-11-15 Denso Corp 半導体装置およびその製造方法
US8004075B2 (en) * 2006-04-25 2011-08-23 Hitachi, Ltd. Semiconductor power module including epoxy resin coating
JP4564937B2 (ja) * 2006-04-27 2010-10-20 日立オートモティブシステムズ株式会社 電気回路装置及び電気回路モジュール並びに電力変換装置
US7619302B2 (en) * 2006-05-23 2009-11-17 International Rectifier Corporation Highly efficient both-side-cooled discrete power package, especially basic element for innovative power modules
JP4858290B2 (ja) * 2006-06-05 2012-01-18 株式会社デンソー 負荷駆動装置
JP2007335663A (ja) * 2006-06-15 2007-12-27 Toyota Motor Corp 半導体モジュール
JP5232367B2 (ja) * 2006-07-12 2013-07-10 ルネサスエレクトロニクス株式会社 半導体装置
EP2047514A4 (fr) * 2006-07-31 2010-12-01 Vishay Siliconix Métal barrière de molybdène pour une diode schottky de sic et son procédé de fabrication
JP4420001B2 (ja) * 2006-09-11 2010-02-24 株式会社日立製作所 パワー半導体モジュール
JP4821537B2 (ja) * 2006-09-26 2011-11-24 株式会社デンソー 電子制御装置
JP2008124430A (ja) * 2006-10-18 2008-05-29 Hitachi Ltd パワー半導体モジュール
JP4349531B2 (ja) * 2006-10-27 2009-10-21 Ｔｄｋ株式会社 マスク装置
JP2008135719A (ja) * 2006-10-31 2008-06-12 Sanyo Electric Co Ltd 半導体モジュール、半導体モジュールの製造方法および携帯機器
WO2008074164A1 (fr) * 2006-12-21 2008-06-26 Abb Research Ltd Module semi-conducteur
US7447041B2 (en) * 2007-03-01 2008-11-04 Delphi Technologies, Inc. Compression connection for vertical IC packages
US8003446B2 (en) * 2007-03-22 2011-08-23 Microsemi Corporation Flexible diode package and method of manufacturing
DE102007020618B8 (de) * 2007-04-30 2009-03-12 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul
US7737548B2 (en) * 2007-08-29 2010-06-15 Fairchild Semiconductor Corporation Semiconductor die package including heat sinks
US20090103342A1 (en) * 2007-10-17 2009-04-23 Saul Lin Silicon-controlled rectifier with a heat-dissipating structure
US20090127701A1 (en) * 2007-11-15 2009-05-21 Nitin Goel Thermal attach for electronic device cooling
JP4506848B2 (ja) * 2008-02-08 2010-07-21 株式会社デンソー 半導体モジュール
KR101493866B1 (ko) * 2008-02-28 2015-02-16 페어차일드코리아반도체 주식회사 전력 소자 패키지 및 그 제조 방법
DE112009005537B3 (de) * 2008-04-09 2022-05-12 Fuji Electric Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
JP2009283656A (ja) 2008-05-22 2009-12-03 Denso Corp 半導体装置およびその製造方法
US20110024896A1 (en) * 2008-07-07 2011-02-03 Mitsubishi Electric Corporation Power semiconductor device
US7724528B2 (en) * 2008-07-11 2010-05-25 Cisco Technology, Inc. Thermal dissipation heat slug sandwich
JP5550225B2 (ja) * 2008-09-29 2014-07-16 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置
US7863103B2 (en) * 2008-10-22 2011-01-04 Texas Instruments Incorporated Thermally improved semiconductor QFN/SON package
US8315608B2 (en) * 2008-12-17 2012-11-20 Steve Cha Easy call for content
JP2010225720A (ja) * 2009-03-23 2010-10-07 Mitsubishi Electric Corp パワーモジュール
JP5018909B2 (ja) * 2009-06-30 2012-09-05 株式会社デンソー 半導体装置
DE112009005044B4 (de) 2009-07-08 2014-04-30 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung und Verfahren zu deren Herstellung
EP2287899B1 (fr) * 2009-08-18 2014-05-07 SEMIKRON Elektronik GmbH & Co. KG Connexion par soudage avec une couche soudable à plusieurs couches et procédé de fabrication correspondant
DE102010038933A1 (de) * 2009-08-18 2011-02-24 Denso Corporation, Kariya-City Halbleitervorrichtung mit Halbleiterchip und Metallplatte und Verfahren zu deren Fertigung
CN102549068B (zh) * 2009-09-29 2016-05-04 日立化成工业株式会社 树脂组合物、树脂片以及树脂固化物及其制造方法
JP5545000B2 (ja) 2010-04-14 2014-07-09 富士電機株式会社 半導体装置の製造方法
JP5557585B2 (ja) * 2010-04-26 2014-07-23 日立オートモティブシステムズ株式会社 パワーモジュール
KR101401764B1 (ko) * 2010-05-12 2014-05-30 도요타지도샤가부시키가이샤 반도체 장치
JP5659938B2 (ja) * 2010-05-17 2015-01-28 富士電機株式会社 半導体ユニットおよびそれを用いた半導体装置
JP5437943B2 (ja) * 2010-07-26 2014-03-12 日立オートモティブシステムズ株式会社 パワー半導体ユニット、パワーモジュールおよびそれらの製造方法
JP5414644B2 (ja) 2010-09-29 2014-02-12 三菱電機株式会社 半導体装置
JP5427745B2 (ja) 2010-09-30 2014-02-26 日立オートモティブシステムズ株式会社 パワー半導体モジュール及びその製造方法
JP5325917B2 (ja) * 2011-03-17 2013-10-23 株式会社東芝 半導体装置及びその製造方法
JP2012230981A (ja) * 2011-04-26 2012-11-22 Elpida Memory Inc 半導体装置及びその製造方法
DE202011100820U1 (de) 2011-05-17 2011-12-01 Ixys Semiconductor Gmbh Leistungshalbleiter
US8804340B2 (en) * 2011-06-08 2014-08-12 International Rectifier Corporation Power semiconductor package with double-sided cooling
JP5529208B2 (ja) * 2011-08-25 2014-06-25 トヨタ自動車株式会社 パワーモジュールの構造及び成形方法
US9048721B2 (en) * 2011-09-27 2015-06-02 Keihin Corporation Semiconductor device
CN103023279B (zh) * 2011-09-27 2015-05-13 株式会社京浜 半导体控制装置
JP5708815B2 (ja) * 2011-09-29 2015-04-30 トヨタ自動車株式会社 半導体装置
JP5661052B2 (ja) * 2012-01-18 2015-01-28 三菱電機株式会社 パワー半導体モジュールおよびその製造方法
ITMI20120711A1 (it) 2012-04-27 2013-10-28 St Microelectronics Srl Dispositivo di potenza
ITMI20120712A1 (it) 2012-04-27 2013-10-28 St Microelectronics Srl Dispositivo elettronico a montaggio passante con doppio dissipatore di calore
ITMI20120713A1 (it) * 2012-04-27 2013-10-28 St Microelectronics Srl Sistema elettronico a montaggio attraverso fori passanti con elementi di dissipazione serrati tra loro contro corpo isolante
DE102012211952B4 (de) * 2012-07-09 2019-04-25 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit mindestens einem stressreduzierenden Anpasselement
US9530722B2 (en) * 2012-09-07 2016-12-27 Hitachi Automotive Systems, Ltd. Semiconductor device and production method for same
EP2899757B1 (fr) 2012-09-20 2023-01-11 Rohm Co., Ltd. Dispositif semi-conducteur de module de puissance et dispositif onduleur, procédé de production de dispositif semi-conducteur de module de puissance et moule
WO2014054212A1 (fr) 2012-10-01 2014-04-10 富士電機株式会社 Dispositif à semi-conducteur et son procédé de fabrication
WO2014061178A1 (fr) * 2012-10-16 2014-04-24 富士電機株式会社 Structure de refroidissement et corps thermogène
US10229870B2 (en) 2012-11-30 2019-03-12 Infineon Technologies Ag Packaged semiconductor device with tensile stress and method of making a packaged semiconductor device with tensile stress
US9093437B2 (en) * 2012-12-04 2015-07-28 Infineon Technologies Ag Packaged vertical power device comprising compressive stress and method of making a packaged vertical power device
US8963303B2 (en) * 2013-02-22 2015-02-24 Stmicroelectronics S.R.L. Power electronic device
JP2014165231A (ja) * 2013-02-22 2014-09-08 Fujitsu Ltd 電子部品ユニット及び固定構造
US8754521B1 (en) * 2013-03-13 2014-06-17 Freescale Semiconductor, Inc. Semiconductor device assembly having a heat spreader
JP5796599B2 (ja) 2013-05-23 2015-10-21 株式会社デンソー 半導体モジュールおよびスイッチング素子の駆動装置
DE102013219245A1 (de) * 2013-09-25 2015-03-26 Siemens Aktiengesellschaft Leistungsmodul mit Einfassung
US9207153B2 (en) * 2013-09-30 2015-12-08 Lg Chem, Ltd. Test jig
KR102208961B1 (ko) * 2013-10-29 2021-01-28 삼성전자주식회사 반도체소자 패키지 및 그 제조방법
JPWO2015107871A1 (ja) * 2014-01-15 2017-03-23 パナソニックＩｐマネジメント株式会社 半導体装置
JP2015144216A (ja) * 2014-01-31 2015-08-06 株式会社東芝 半導体装置及びその製造方法
JP6295768B2 (ja) * 2014-03-26 2018-03-20 株式会社デンソー 半導体装置の製造方法
JP6407756B2 (ja) 2014-03-31 2018-10-17 株式会社東芝 半導体モジュールの製造方法
US9331000B2 (en) * 2014-04-02 2016-05-03 Kyocera America, Inc. Heat management in electronics packaging
DE102014212455B4 (de) * 2014-06-27 2024-07-04 Robert Bosch Gmbh Diode mit einem plattenförmigen Halbleiterelement
JP6341822B2 (ja) * 2014-09-26 2018-06-13 三菱電機株式会社 半導体装置
US9397053B2 (en) * 2014-10-15 2016-07-19 Hong Kong Applied Science and Technology Research Institute Company Limited Molded device with anti-delamination structure providing multi-layered compression forces
JP6409690B2 (ja) * 2014-11-20 2018-10-24 株式会社デンソー 冷却モジュール
JP6578900B2 (ja) 2014-12-10 2019-09-25 株式会社デンソー 半導体装置及びその製造方法
JP6309112B2 (ja) * 2014-12-29 2018-04-11 三菱電機株式会社 パワーモジュール
US10679965B2 (en) * 2015-02-04 2020-06-09 Zowie Technology Corporation Semiconductor package structure with preferred heat dissipating efficacy without formation of short circuit
CN107636827B (zh) * 2015-04-13 2020-05-12 Abb瑞士股份有限公司 功率电子设备模块
JP6394489B2 (ja) * 2015-05-11 2018-09-26 株式会社デンソー 半導体装置
TWI562311B (en) * 2015-05-12 2016-12-11 Chipmos Technologies Inc Package structure and manufactruing method thereof
DE102015108700B4 (de) 2015-06-02 2025-01-09 Infineon Technologies Austria Ag Halbleiter-Leistungs-Package und Verfahren zu ihrer Herstellung
CN105161467B (zh) * 2015-08-14 2019-06-28 株洲南车时代电气股份有限公司 一种用于电动汽车的功率模块
JP6418126B2 (ja) * 2015-10-09 2018-11-07 三菱電機株式会社 半導体装置
CN105355609A (zh) * 2015-11-30 2016-02-24 南京长峰航天电子科技有限公司 一种散热封装结构
US10845375B2 (en) * 2016-02-19 2020-11-24 Agjunction Llc Thermal stabilization of inertial measurement units
JP6897056B2 (ja) * 2016-10-20 2021-06-30 富士電機株式会社 半導体装置及び半導体装置製造方法
JP2018073851A (ja) * 2016-10-24 2018-05-10 ソニーセミコンダクタソリューションズ株式会社 半導体装置、製造方法、及び、固体撮像装置
DE102016121801B4 (de) * 2016-11-14 2022-03-17 Infineon Technologies Ag Baugruppe mit Verbindungen, die verschiedene Schmelztemperaturen aufweisen, Fahrzeug mit der Baugruppe und Verfahren zum Herstellen derselben und Verwendung der Baugruppe für eine Automobilanwendung
CN110050341B (zh) * 2016-12-06 2024-05-28 株式会社东芝 半导体装置
JP2018133448A (ja) * 2017-02-15 2018-08-23 株式会社東芝 半導体装置
JP6897141B2 (ja) * 2017-02-15 2021-06-30 株式会社デンソー 半導体装置とその製造方法
WO2018168591A1 (fr) * 2017-03-13 2018-09-20 株式会社村田製作所 Module
JP6696480B2 (ja) 2017-03-22 2020-05-20 株式会社デンソー 半導体装置
JP6985588B2 (ja) * 2017-04-07 2021-12-22 富士通株式会社 電子装置及び電磁波吸収体
JP6997552B2 (ja) * 2017-07-28 2022-01-17 日立Astemo株式会社 電力変換装置及び電力変換装置の製造方法
JP6979864B2 (ja) * 2017-11-30 2021-12-15 日立Astemo株式会社 パワー半導体装置及びその製造方法
JP2019102724A (ja) * 2017-12-06 2019-06-24 株式会社村田製作所 半導体素子
JP2019192729A (ja) * 2018-04-23 2019-10-31 株式会社村田製作所 半導体装置
KR102519001B1 (ko) 2018-05-28 2023-04-10 삼성전자주식회사 필름 패키지 및 이를 포함하는 패키지 모듈
US11088046B2 (en) * 2018-06-25 2021-08-10 Semiconductor Components Industries, Llc Semiconductor device package with clip interconnect and dual side cooling
US10804217B2 (en) 2018-08-10 2020-10-13 STATS ChipPAC Pte. Ltd. EMI shielding for flip chip package with exposed die backside
US11355452B2 (en) * 2018-08-10 2022-06-07 STATS ChipPAC Pte. Ltd. EMI shielding for flip chip package with exposed die backside
WO2020189508A1 (fr) * 2019-03-19 2020-09-24 株式会社デンソー Module semi-conducteur et dispositif à semi-conducteur utilisé pour celui-ci
CN110620089B (zh) * 2019-08-15 2021-06-22 安徽国晶微电子有限公司 电源芯片封装结构
US12199045B2 (en) * 2020-03-27 2025-01-14 Wolfspeed, Inc. Power semiconductor package with improved performance
CN121240508A (zh) * 2020-04-17 2025-12-30 株式会社电装 半导体装置及半导体模组
CN111540718B (zh) * 2020-05-07 2022-02-08 全球能源互联网研究院有限公司 一种碳化硅器件的封装结构
US11651973B2 (en) 2020-05-08 2023-05-16 International Business Machines Corporation Method and apparatus of processor wafer bonding for wafer-scale integrated supercomputer
JP7516883B2 (ja) 2020-06-05 2024-07-17 株式会社デンソー 半導体装置、半導体モジュールおよび半導体装置の製造方法
JP6899980B1 (ja) * 2020-08-03 2021-07-07 三菱電機株式会社 半導体装置モジュールおよびその製造方法
JP7301805B2 (ja) 2020-09-24 2023-07-03 株式会社東芝 半導体モジュール
JP7523419B2 (ja) * 2021-10-04 2024-07-26 三菱電機株式会社 電力用半導体装置の製造方法

Family Cites Families (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295089A (en) * 1963-10-11 1966-12-27 American Mach & Foundry Semiconductor device
GB1004020A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Improvements in or relating to the mounting of electrical components
US3523215A (en) * 1968-03-19 1970-08-04 Westinghouse Electric Corp Stack module for flat package semiconductor device assemblies
US3652903A (en) * 1971-02-01 1972-03-28 Gen Electric Fluid cooled pressure assembly
DE2556749A1 (de) 1975-12-17 1977-06-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement in scheibenzellenbauweise
JPS603776B2 (ja) * 1977-06-03 1985-01-30 株式会社日立製作所 半導体素子
JPS5440569A (en) 1977-09-06 1979-03-30 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPS5495183A (en) 1978-01-13 1979-07-27 Mitsubishi Electric Corp Pressure contact-type semiconductor device
DE2810416C2 (de) * 1978-03-10 1983-09-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterbauelement mit Kunststoffummantelung
US4392153A (en) * 1978-05-01 1983-07-05 General Electric Company Cooled semiconductor power module including structured strain buffers without dry interfaces
JPS5787139A (en) 1980-11-19 1982-05-31 Hitachi Ltd Semiconductor device
US4546374A (en) 1981-03-23 1985-10-08 Motorola Inc. Semiconductor device including plateless package
US4620215A (en) 1982-04-16 1986-10-28 Amdahl Corporation Integrated circuit packaging systems with double surface heat dissipation
JPS5931042A (ja) 1982-08-12 1984-02-18 Mitsubishi Electric Corp 高周波高出力半導体装置
JPS5938734A (ja) 1982-08-30 1984-03-02 Kato Denki Kk 原稿圧着板開閉装置
US4538170A (en) 1983-01-03 1985-08-27 General Electric Company Power chip package
GB2146174B (en) 1983-09-06 1987-04-23 Gen Electric Hermetic power chip packages
US4646129A (en) 1983-09-06 1987-02-24 General Electric Company Hermetic power chip packages
US4558345A (en) 1983-10-27 1985-12-10 Rca Corporation Multiple connection bond pad for an integrated circuit device and method of making same
JPS6095947A (ja) 1983-10-31 1985-05-29 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用Ａｌ線
JPS60137042A (ja) 1983-12-26 1985-07-20 Matsushita Electronics Corp 樹脂封止形半導体装置
JPS60235430A (ja) 1984-05-09 1985-11-22 Hitachi Ltd 半導体装置
JPS61141751A (ja) 1984-12-14 1986-06-28 Mitsubishi Petrochem Co Ltd 水添ブロツク共重合体組成物
JPS61147539A (ja) * 1984-12-21 1986-07-05 Toshiba Corp 半導体整流装置の製造方法
JPS61166051A (ja) 1985-01-17 1986-07-26 Matsushita Electronics Corp 樹脂封止型半導体装置
JPS61251043A (ja) 1985-04-30 1986-11-08 Hitachi Ltd 圧接型半導体装置
JPS61265849A (ja) 1985-05-20 1986-11-25 Sharp Corp 電力半導体装置
JP3258200B2 (ja) 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
JPS6292349A (ja) 1985-10-17 1987-04-27 Mitsubishi Electric Corp 半導体素子冷却装置
JPS62141751A (ja) 1985-12-16 1987-06-25 Fuji Electric Co Ltd 平形半導体素子スタツク
JPH077810B2 (ja) 1986-06-06 1995-01-30 株式会社日立製作所 半導体装置
JPS6396946A (ja) 1986-10-13 1988-04-27 Mitsubishi Electric Corp 半導体装置
JPS63102326A (ja) 1986-10-20 1988-05-07 Hitachi Cable Ltd クラツド材
JPS63283040A (ja) 1987-05-15 1988-11-18 Toshiba Corp 半導体装置
JP2579315B2 (ja) 1987-06-17 1997-02-05 新光電気工業株式会社 セラミツクパツケ−ジ
JPH01228138A (ja) 1988-03-09 1989-09-12 Fuji Electric Co Ltd 二端子半導体素子の外装構造
DE3910470C2 (de) * 1988-03-31 1995-03-09 Toshiba Kawasaki Kk Leistungshalbleiter-Schaltervorrichtung mit in den beteiligten Chips verringerter Wärmebelastung, insb. Wärmespannung
US4935803A (en) * 1988-09-09 1990-06-19 Motorola, Inc. Self-centering electrode for power devices
US5260604A (en) 1988-09-27 1993-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with improved immunity to contact and conductor defects
JPH02117157A (ja) 1988-10-26 1990-05-01 Mitsubishi Electric Corp 半導体装置
JPH02177157A (ja) 1988-12-28 1990-07-10 Toshiba Corp テープローディング装置
US5229646A (en) 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JPH0320067A (ja) 1989-04-29 1991-01-29 Tokin Corp セラミック放熱フィン付半導体装置
FR2660797A1 (fr) 1990-04-06 1991-10-11 Motorola Semiconducteurs Boitier d'encapsulage perfectionne pour dispositif a semiconducteur.
JPH0412555A (ja) 1990-05-02 1992-01-17 Matsushita Electron Corp 半導体装置
JPH0427145A (ja) 1990-05-22 1992-01-30 Seiko Epson Corp 半導体装置
KR950010283B1 (ko) 1990-05-31 1995-09-12 캐논 가부시끼가이샤 매립전극을 가지는 반도체장치 및 그의 제조방법
JPH04103150A (ja) 1990-08-23 1992-04-06 Mitsubishi Materials Corp Ｉｃ実装構造
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
JP2905609B2 (ja) 1991-02-05 1999-06-14 三菱電機株式会社 樹脂封止型半導体装置
DE59107655D1 (de) 1991-02-22 1996-05-09 Asea Brown Boveri Abschaltbares Hochleistungs-Halbleiterbauelement
JP3018554B2 (ja) * 1991-04-25 2000-03-13 株式会社日立製作所 半導体モジュ−ル及びその製造方法
JP3061891B2 (ja) 1991-06-21 2000-07-10 キヤノン株式会社 半導体装置の製造方法
JPH05109919A (ja) 1991-10-12 1993-04-30 Nippondenso Co Ltd 混成集積回路
US5248853A (en) 1991-11-14 1993-09-28 Nippondenso Co., Ltd. Semiconductor element-mounting printed board
JPH05283562A (ja) 1992-03-31 1993-10-29 Toshiba Corp 樹脂封止型半導体装置
JP3129020B2 (ja) 1992-04-09 2001-01-29 富士電機株式会社 半導体装置
JPH05326808A (ja) * 1992-05-15 1993-12-10 Ibiden Co Ltd 電子部品搭載用基板およびこれを用いた半導体装置
DE4326207A1 (de) * 1992-10-06 1994-04-07 Hewlett Packard Co Mechanisch schwimmendes Mehr-Chip-Substrat
US5352629A (en) * 1993-01-19 1994-10-04 General Electric Company Process for self-alignment and planarization of semiconductor chips attached by solder die adhesive to multi-chip modules
JP3371504B2 (ja) 1993-01-25 2003-01-27 株式会社デンソー 合金電極にワイヤボンディングされた半導体装置及び合金電極の製造方法
JPH06291235A (ja) * 1993-03-31 1994-10-18 Sanyo Electric Co Ltd 混成集積回路
JP2504913B2 (ja) 1993-06-08 1996-06-05 日本電気株式会社 ヒ―トシンク搭載型半導体装置及びその製造方法並びに半導体装置用ヒ―トシンク
JPH077125A (ja) * 1993-06-15 1995-01-10 Shinko Electric Ind Co Ltd 多層リードフレーム
US5396403A (en) * 1993-07-06 1995-03-07 Hewlett-Packard Company Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate
JPH0738013A (ja) 1993-07-22 1995-02-07 Origin Electric Co Ltd 複合ベース部材及び電力用半導体装置
JPH0745765A (ja) 1993-07-27 1995-02-14 Fuji Electric Co Ltd 樹脂封止型半導体装置の樹脂封止法
JP3225706B2 (ja) 1993-08-25 2001-11-05 ソニー株式会社 半導体装置におけるバリアメタル層の形成方法
US5641997A (en) 1993-09-14 1997-06-24 Kabushiki Kaisha Toshiba Plastic-encapsulated semiconductor device
JP2991010B2 (ja) * 1993-09-29 1999-12-20 富士電機株式会社 半導体装置およびその製造方法
EP0660396B1 (fr) 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Ensemble de dispositif de puissance du type puce MOS et son empaquetage
DE4403996A1 (de) * 1994-02-09 1995-08-10 Bosch Gmbh Robert Gleichrichteranordnung für einen Drehstromgenerator
US5723882A (en) 1994-03-10 1998-03-03 Nippondenso Co., Ltd. Insulated gate field effect transistor having guard ring regions
JP3284811B2 (ja) * 1994-03-17 2002-05-20 富士電機株式会社 半田接合方法および半導体製造治具と半導体装置の製造方法
JPH07273276A (ja) 1994-03-28 1995-10-20 Nissan Motor Co Ltd パワー素子とスナバ素子の接続構造及びその実装構造
JPH0845874A (ja) 1994-07-30 1996-02-16 Mitsumi Electric Co Ltd 半導体装置
US6124179A (en) * 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process
JPH08191145A (ja) 1995-01-12 1996-07-23 Fuji Electric Co Ltd 絶縁ゲート型半導体素子およびその製造方法
JP3269745B2 (ja) 1995-01-17 2002-04-02 株式会社日立製作所 モジュール型半導体装置
JP3272242B2 (ja) 1995-06-09 2002-04-08 三洋電機株式会社 半導体装置
JP3850054B2 (ja) 1995-07-19 2006-11-29 三菱電機株式会社 半導体装置
JP2818557B2 (ja) * 1995-07-28 1998-10-30 日本電気株式会社 金属薄膜の形成方法および形成装置
US5726466A (en) 1995-09-11 1998-03-10 Kabushiki Kaisha Toshiba Press pack power semiconductor device incorporating a plurality of semiconductor elements
JPH09148492A (ja) 1995-11-17 1997-06-06 Murata Mfg Co Ltd 電子部品パッケージ装置
US5801455A (en) * 1996-02-02 1998-09-01 Edward G. Karnig Apparatus and method for disarming automobile alarm system
JP3070473B2 (ja) 1996-02-28 2000-07-31 日本電気株式会社 半導体装置の実装方法及び構造
JPH09237868A (ja) 1996-02-29 1997-09-09 Hitachi Ltd 半導体モジュール
JP3510039B2 (ja) 1996-03-15 2004-03-22 株式会社デンソー 半導体装置およびその製造方法
DE19617055C1 (de) * 1996-04-29 1997-06-26 Semikron Elektronik Gmbh Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise
JPH1065072A (ja) 1996-08-20 1998-03-06 Taiyo Yuden Co Ltd 放熱電極構造
WO1998012748A1 (fr) 1996-09-18 1998-03-26 Hitachi, Ltd. Module a semiconducteur de jonction
JPH10125700A (ja) 1996-10-17 1998-05-15 Hitachi Ltd 加圧接触型半導体装置及びその組み立て方法
US6452261B1 (en) * 1997-03-26 2002-09-17 Hitachi, Ltd. Flat semiconductor device and power converter employing the same
JP2914342B2 (ja) * 1997-03-28 1999-06-28 日本電気株式会社 集積回路装置の冷却構造
JPH11186469A (ja) 1997-12-22 1999-07-09 Seiko Epson Corp 半導体装置
JPH11204803A (ja) 1998-01-13 1999-07-30 Tokin Corp 半導体装置の製造方法
US6015652A (en) * 1998-02-27 2000-01-18 Lucent Technologies Inc. Manufacture of flip-chip device
JP4091159B2 (ja) 1998-03-10 2008-05-28 株式会社日本自動車部品総合研究所 圧接型半導体装置
JP4095706B2 (ja) * 1998-03-27 2008-06-04 株式会社日立製作所 半導体装置
JPH11284103A (ja) 1998-03-31 1999-10-15 Fuji Electric Co Ltd 樹脂モールド半導体装置
JP3152209B2 (ja) 1998-07-07 2001-04-03 日本電気株式会社 半導体装置及びその製造方法
JP3922809B2 (ja) 1998-07-09 2007-05-30 株式会社東芝 半導体装置
JP2000091485A (ja) 1998-07-14 2000-03-31 Denso Corp 半導体装置
JP3525753B2 (ja) * 1998-08-26 2004-05-10 株式会社豊田中央研究所 パワーモジュール
US6072240A (en) 1998-10-16 2000-06-06 Denso Corporation Semiconductor chip package
JP4085536B2 (ja) 1998-11-09 2008-05-14 株式会社日本自動車部品総合研究所 電気機器およびその製造方法並びに圧接型半導体装置
FR2786655B1 (fr) * 1998-11-27 2001-11-23 Alstom Technology Dispositif electronique de puissance
JP3180800B2 (ja) * 1999-04-08 2001-06-25 カシオ計算機株式会社 半導体装置及びその製造方法
JP2001118961A (ja) 1999-10-15 2001-04-27 Mitsubishi Electric Corp 樹脂封止型電力用半導体装置及びその製造方法
JP2001189412A (ja) * 1999-12-27 2001-07-10 Mitsubishi Electric Corp 半導体装置および半導体実装方法
JP3637277B2 (ja) * 2000-03-21 2005-04-13 大塚化学ホールディングス株式会社 難燃剤、及び難燃性樹脂組成物、及び成形物、及び電子部品
KR100407448B1 (ko) 2000-06-12 2003-11-28 가부시키가이샤 히타치세이사쿠쇼 전자 기기 및 반도체 장치
JP2002184986A (ja) 2000-12-13 2002-06-28 Mitsubishi Electric Corp 電界効果型半導体装置
WO2002058160A1 (fr) * 2001-01-19 2002-07-25 Mitsubishi Denki Kabushiki Kaisha Dispositif a semi-conducteur
US6815767B2 (en) 2001-02-01 2004-11-09 Mitsubishi Denki Kabushiki Kaisha Insulated gate transistor
JP4479121B2 (ja) 2001-04-25 2010-06-09 株式会社デンソー 半導体装置の製造方法

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US6992383B2 (en) 2006-01-31
US20040089941A1 (en) 2004-05-13
DE10058446B8 (de) 2013-04-11
DE10058446A1 (de) 2001-05-31
DE10066443B8 (de) 2012-04-19
US6703707B1 (en) 2004-03-09
US6798062B2 (en) 2004-09-28
US20040089940A1 (en) 2004-05-13
DE10066443B4 (de) 2011-08-11
DE10066441B4 (de) 2012-10-18
DE10066446B4 (de) 2011-09-29
US6891265B2 (en) 2005-05-10
DE10058446B4 (de) 2012-12-27
US20040070072A1 (en) 2004-04-15
DE10066445B4 (de) 2011-06-22
US20040070060A1 (en) 2004-04-15
US6960825B2 (en) 2005-11-01
US20040097082A1 (en) 2004-05-20
US6998707B2 (en) 2006-02-14
DE10066442B4 (de) 2011-09-22
US20050167821A1 (en) 2005-08-04
US20040089925A1 (en) 2004-05-13
FR2801423A1 (fr) 2001-05-25
US6967404B2 (en) 2005-11-22
US20040089942A1 (en) 2004-05-13

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