JPH03266437A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH03266437A JPH03266437A JP2065669A JP6566990A JPH03266437A JP H03266437 A JPH03266437 A JP H03266437A JP 2065669 A JP2065669 A JP 2065669A JP 6566990 A JP6566990 A JP 6566990A JP H03266437 A JPH03266437 A JP H03266437A
- Authority
- JP
- Japan
- Prior art keywords
- contact hole
- resist film
- film
- insulating film
- slope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
- H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2065669A JPH03266437A (ja) | 1990-03-16 | 1990-03-16 | 半導体装置の製造方法 |
| KR1019910004026A KR950000090B1 (ko) | 1990-03-16 | 1991-03-14 | 반도체장치의 제조방법 |
| EP91104008A EP0446939A2 (en) | 1990-03-16 | 1991-03-15 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2065669A JPH03266437A (ja) | 1990-03-16 | 1990-03-16 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03266437A true JPH03266437A (ja) | 1991-11-27 |
Family
ID=13293639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2065669A Pending JPH03266437A (ja) | 1990-03-16 | 1990-03-16 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0446939A2 (2) |
| JP (1) | JPH03266437A (2) |
| KR (1) | KR950000090B1 (2) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007514201A (ja) * | 2003-12-12 | 2007-05-31 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | フォトレジスト層の表面にくぼみを形成する方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63258022A (ja) * | 1987-04-15 | 1988-10-25 | Rohm Co Ltd | 半導体装置の製造方法 |
| JPH0237707A (ja) * | 1988-07-27 | 1990-02-07 | Nec Corp | 半導体装置の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114319A (en) * | 1980-02-14 | 1981-09-08 | Fujitsu Ltd | Method for forming contact hole |
| US4714686A (en) * | 1985-07-31 | 1987-12-22 | Advanced Micro Devices, Inc. | Method of forming contact plugs for planarized integrated circuits |
| US4727045A (en) * | 1986-07-30 | 1988-02-23 | Advanced Micro Devices, Inc. | Plugged poly silicon resistor load for static random access memory cells |
| JPH01120847A (ja) * | 1987-11-05 | 1989-05-12 | Fujitsu Ltd | 半導体装置 |
-
1990
- 1990-03-16 JP JP2065669A patent/JPH03266437A/ja active Pending
-
1991
- 1991-03-14 KR KR1019910004026A patent/KR950000090B1/ko not_active Expired - Fee Related
- 1991-03-15 EP EP91104008A patent/EP0446939A2/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63258022A (ja) * | 1987-04-15 | 1988-10-25 | Rohm Co Ltd | 半導体装置の製造方法 |
| JPH0237707A (ja) * | 1988-07-27 | 1990-02-07 | Nec Corp | 半導体装置の製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007514201A (ja) * | 2003-12-12 | 2007-05-31 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | フォトレジスト層の表面にくぼみを形成する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950000090B1 (ko) | 1995-01-09 |
| EP0446939A3 (2) | 1994-03-30 |
| EP0446939A2 (en) | 1991-09-18 |
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