JPS6115579B2 - - Google Patents

Info

Publication number
JPS6115579B2
JPS6115579B2 JP53101083A JP10108378A JPS6115579B2 JP S6115579 B2 JPS6115579 B2 JP S6115579B2 JP 53101083 A JP53101083 A JP 53101083A JP 10108378 A JP10108378 A JP 10108378A JP S6115579 B2 JPS6115579 B2 JP S6115579B2
Authority
JP
Japan
Prior art keywords
film
glass layer
semiconductor substrate
silicon
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53101083A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5527659A (en
Inventor
Kazuhiko Tsuji
Takashi Oosone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10108378A priority Critical patent/JPS5527659A/ja
Publication of JPS5527659A publication Critical patent/JPS5527659A/ja
Publication of JPS6115579B2 publication Critical patent/JPS6115579B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP10108378A 1978-08-18 1978-08-18 Method of manufacturing semiconductor device Granted JPS5527659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10108378A JPS5527659A (en) 1978-08-18 1978-08-18 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10108378A JPS5527659A (en) 1978-08-18 1978-08-18 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5527659A JPS5527659A (en) 1980-02-27
JPS6115579B2 true JPS6115579B2 (2) 1986-04-24

Family

ID=14291195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10108378A Granted JPS5527659A (en) 1978-08-18 1978-08-18 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5527659A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03504895A (ja) * 1989-02-17 1991-10-24 ベル、ヘリカプタ、テクストロン、インコーパレイティド うず電流検出器を使用して材料を検査する方法及び保護裏当てにより未硬化の複合品シートの表面を保護する方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4499653A (en) * 1983-11-03 1985-02-19 Westinghouse Electric Corp. Small dimension field effect transistor using phosphorous doped silicon glass reflow process
JPH063798B2 (ja) * 1985-02-06 1994-01-12 日本電気株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03504895A (ja) * 1989-02-17 1991-10-24 ベル、ヘリカプタ、テクストロン、インコーパレイティド うず電流検出器を使用して材料を検査する方法及び保護裏当てにより未硬化の複合品シートの表面を保護する方法

Also Published As

Publication number Publication date
JPS5527659A (en) 1980-02-27

Similar Documents

Publication Publication Date Title
US4545114A (en) Method of producing semiconductor device
JPH05102427A (ja) 半導体記憶素子の製造方法
US4408387A (en) Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
JPH03129818A (ja) 半導体装置の製造方法
JPS6115579B2 (2)
JPS5912020B2 (ja) 半導体装置の製造方法
JP2707536B2 (ja) 半導体装置の製造方法
JPS6134255B2 (2)
JP2674964B2 (ja) 半導体装置の製造方法
JPS6128231B2 (2)
JPS61251165A (ja) Ｂｉ−ＭＩＳ集積回路の製造方法
JPS6118348B2 (2)
JPS59220968A (ja) 半導体装置の製造方法
JP2594697B2 (ja) 半導体装置の製造方法
JPS60236247A (ja) 半導体装置の製造方法
JPS60258965A (ja) 半導体装置の製造方法
JPS6188543A (ja) 半導体装置の製造方法
JPS6081863A (ja) 半導体装置の製造方法
JPS62131538A (ja) 半導体装置の製造方法
JPH0117256B2 (2)
JPS6288335A (ja) 半導体装置における素子間分離方法
JPS6021539A (ja) 半導体装置の製造方法
JPH03160726A (ja) 半導体装置の製造方法
JPS59211244A (ja) 半導体装置の製造方法
JPH01123471A (ja) 半導体装置の製造方法