TW201933509A - 用於向反應腔室配送氣相反應物之裝置及相關方法 - Google Patents

用於向反應腔室配送氣相反應物之裝置及相關方法 Download PDF

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TW201933509A
TW201933509A TW107133310A TW107133310A TW201933509A TW 201933509 A TW201933509 A TW 201933509A TW 107133310 A TW107133310 A TW 107133310A TW 107133310 A TW107133310 A TW 107133310A TW 201933509 A TW201933509 A TW 201933509A
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盧西恩 傑迪拉
赫伯特 特豪斯特
辻直人
諏佐喜朗
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荷蘭商Ａｓｍ智慧財產控股公司
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Abstract

揭示一種用於向反應腔室配送氣相反應物之裝置。該裝置可包括：第一腔室，其組態成用於以第一填充液位容納源化學物；及第二腔室，其組態成用於以第二填充液位容納該源化學物，且經由該第一填充液位及該第二填充液位下方的流體通道而與該第一腔室呈流體連通。該裝置亦可包括：第一腔室入口開口，其與載氣進料管線流體連通，該載氣進料管線組態成用於使載氣流入該第一腔室以使該源化學物之氣相混入該載氣中以產生該氣相反應物；第一腔室出口開口，其與氣體出口管線流體連通且組態成用於自該第一腔室配送該氣相反應物；及第二腔室入口開口，其與設有流動控制器之加壓氣體進料流體連通，該流動控制器組態成用於控制該第二腔室中的加壓氣體之流動以控制該第一腔室中的該第一填充液位。亦提供用於配送氣相反應物之方法。

Description

用於向反應腔室配送氣相反應物之裝置及相關方法
本發明大體上係關於一種用於向反應腔室配送氣相反應物之裝置，且尤其關於一種用於向反應腔室配送高度穩定之氣相反應物流持續延長時段的裝置。本發明亦包括用於向反應腔室配送氣相反應物之方法。
半導體加工裝置通常會使用一或多種氣相反應物，亦即前驅體作為源化學物來進行半導體基板處理，諸如沈積處理、清洗處理及蝕刻處理。氣相反應物一般係儲存在化學用瓶中，該等化學用瓶亦通常稱作化學用安瓿。
高容量半導體製造設施會利用大量氣相反應物，產生需以額外的前驅體定期再裝填化學用安瓿，或替代地，頻繁地以滿的化學用安瓿更換卸料後之化學用安瓿。
然而，存在一些前驅體形式為不容易適用於再裝填化學用安瓿者，例如可容易降解之特定前驅體或在再裝填程序期間可能會牢固地附接至化學用安瓿之內表面的特定前驅體。此外，用滿的化學用安瓿更換卸料後之化學用安瓿可能會導致非所期望的半導體加工裝置之停機時間，且亦可能使對大量化學用安瓿之安全儲存的需求成為必要。因此有需要限制化學用安瓿交換或化學用安瓿再裝填的頻率。
一種降低化學用安瓿交換或化學用安瓿再裝填之頻率的基本方法為增加化學用安瓿的尺寸，由此使化學用安瓿儲存更多源化學物。然而，化學用安瓿通常會經加熱以使源化學物達至操作溫度，且穩定、可重複之半導體加工效能使跨化學用安瓿中所儲存的前驅體之溫度梯度降至最低成為必要。舉例而言，化學用安瓿可藉由稱作帶式加熱器(belt heater)之加熱器形式來加熱，其中帶式加熱器圍繞化學用安瓿捲繞且封閉其外表面。然而，由於化學用安瓿之尺寸增加了由帶式加熱器提供之熱量的提高比例，其可能會不合需要地吸收於化學用安瓿之外表面，因此在化學用安瓿上產生非所期望之熱梯度且隨之使半導體製造過程劣化。
除了加熱較大化學用安瓿之相關問題以外，擴大化學用安瓿還可能會引起其他加工問題。舉例而言，沈積處理，諸如原子層沈積處理，可利用一或多種化學用安瓿作為用於物質沈積之化學源。在操作成品基板之前，可能需要進行穩定處理，以便使化學用安瓿內的前驅體之蒸氣壓穩定。此穩定處理可能會耗費掉寶貴的加工時間且可稱作「虛設時間(dummy time)」。已發現，隨著化學用安瓿之容量的增加，使化學用安瓿內的前驅體之蒸氣壓穩定所需的「虛設時間」亦會顯著增加，由此浪費掉寶貴的加工時間且消耗掉寶貴的前驅體。
化學用安瓿可與一或多種載氣之源連接。載氣引入至化學用安瓿中且抽至容納在化學用安瓿中的源化學物，亦即前驅體之暴露表面的上方。所引起的源化學物之蒸發使該源化學物之氣相混入載氣中，由此產生可配送至反應腔室之氣相反應物。已發現，源化學物之最大蒸發速率出現在載氣入口正下方，亦即在該處為載氣流最接近於源化學物。亦已發現，當源化學物經消耗時，源化學物之填充液位有所降低，由此增加載氣入口與源化學物之暴露表面之間的距離。載氣入口與源化學物之暴露表面之間的距離之增加可引起自化學 用安瓿至反應腔室的氣相反應物流發生不合需要之變化。舉例而言，當源化學物經消耗且載氣入口與源化學物之表面之間的距離增加時，氣相反應物自化學用安瓿至反應腔室之流動可能會減少，進而導致半導體加工條件發生不合需要之變化。
因此，用於自高容量化學用安瓿向反應腔室配送高度穩定之氣相反應物流持續延長時段的裝置及方法為令人期望的。
提供本內容概要係為了以簡化形式來引介一些概念。此等概念更詳細地說明於以下揭示之實例具體例的詳細說明中。本概要不欲指出所主張標的物之關鍵特徵或基本特徵，亦不欲用來限制所主張標的物之範疇。
在本發明之一些具體例中，提供一種用於向反應腔室配送氣相反應物之裝置。該裝置可包含：第一腔室，其組態成用於以第一填充液位容納源化學物；及第二腔室，其組態成用於以第二填充液位容納源化學物，該第二腔室經由第一填充液位及第二填充液位下方的流體通道而與第一腔室呈流體連通。該裝置亦可包含；第一腔室入口開口，其與載氣進料管線流體連通，該載氣進料管線組態成用於使載氣流入第一腔室以使源化學物之氣相混入載氣中以產生氣相反應物；該裝置可進一步包含：第一腔室出口開口，其與氣體出口管線流體連通且組態成用於自第一腔室配送氣相反應物；及第二腔室入口開口，其與設有流動控制器之加壓氣體進料管線流體連通，該流動控制器組態成用於控制第二腔室中的加壓氣體之流動以控制第一腔室中的第一填充液位。
本發明之具體例亦可提供用於向反應腔室配送氣相反應物之方法。該等方法可包括：設置第一腔室用於以第一填充液位容納源化學物，且設置組態成用於以第二填充液位容納源化學物，經由流體通道與第一腔室流體連 通的第二腔室。該等方法亦可包含：經由第一腔室入口開口使載氣流入第一腔室中，其中使載氣流入第一腔室中會使源化學物之氣相混入載氣中以產生氣相反應物；且經由與出口氣體管線流體連通的第一腔室出口開口自第一腔室配送氣相反應物。該等方法可進一步包含：經由第二腔室入口開口控制加壓氣體向第二腔室中的流入以將第一填充液位調節至實質上恆定之液位。
100‧‧‧裝置
102‧‧‧第一腔室
104‧‧‧源化學物
104`‧‧‧源化學物
106‧‧‧第二腔室
108‧‧‧流體通道
110‧‧‧第一填充液位
112‧‧‧第二填充液位
114‧‧‧通道
116‧‧‧液位感測器
118‧‧‧液位感測器
120‧‧‧第一腔室入口開口
122‧‧‧載氣進料管線
124‧‧‧第一腔室出口開口
125‧‧‧閥門
126‧‧‧氣體出口管線
128‧‧‧閥門
130‧‧‧第二腔室入口開口
132‧‧‧加壓氣體進料管線
134‧‧‧壓力控制單元
135‧‧‧閥門
136‧‧‧第二腔室入口開口
138‧‧‧氣相進料管線
140‧‧‧閥門
200‧‧‧化學物配送裝置
202‧‧‧第一腔室
204‧‧‧源化學物
204`‧‧‧源化學物
206‧‧‧第二腔室
208‧‧‧流體通道
210‧‧‧第一填充液位
212‧‧‧第二填充液位
214‧‧‧通道
216‧‧‧液位感測器
218‧‧‧液位感測器
220‧‧‧開口
222‧‧‧載氣進料管線
224‧‧‧開口
225‧‧‧閥門
226‧‧‧氣體出口管線
228‧‧‧閥門
230‧‧‧第二腔室入口開口
232‧‧‧加壓氣體進料管線
234‧‧‧壓力控制單元
236‧‧‧第二腔室出口開口
238‧‧‧氣體出口管線
240‧‧‧閥門
300‧‧‧溫度受控化學物配送裝置
302‧‧‧第一加熱裝置
304‧‧‧第二加熱裝置
400‧‧‧方法
410‧‧‧設置第一腔室以容納達至第一填充液位之源化學物
420‧‧‧設置與第一腔室流體連通之第二腔室
430‧‧‧使載氣流入第一腔室中以產生氣相反應物
440‧‧‧自第一腔室配送氣相反應物
450‧‧‧控制加壓氣體向第二腔室中流動
460‧‧‧調節第一填充液位處於實質上恆定之位置
A-A‧‧‧平面
儘管本說明書以具體指出且明確主張視為本發明之具體例的申請專利範圍作結，但在結合附圖理解時可更容易根據本發明之具體例之某些實例的描述來確定本發明之具體例的優點，在附圖中：圖1為根據本發明之具體例的用於向反應腔室配送氣相反應物之化學物遞送裝置的示意圖；圖2A為根據本發明之具體例的用於向反應腔室配送氣相反應物之替代化學物遞送裝置的三維示意圖；圖2B為根據本發明之具體例的用於向反應腔室配送氣相反應物之替代化學物遞送裝置的橫剖面圖；圖3為根據本發明之具體例的溫度受控化學物配送裝置之展開剖面圖；圖4展示根據本發明之具體例的用於向反應腔室配送氣相反應物之例示性過程流程。
儘管在下文中揭示特定具體例及實例，但彼等熟悉本技藝者應理解，本發明延伸超出本發明所具體揭示之具體例及/或用途及其明顯修改及等 效物。因此，希望所揭示之本發明之範疇不應受下文所描述之具體揭示之具體例限制。
本文呈現之圖示並不意欲為任何特定物質、結構或構件之實際視圖，但僅為用於描述本發明之具體例的理想化表示。
本發明之具體例可包括用於向反應腔室配送氣相反應物之裝置及方法。具體而言，本發明之具體例可包括能夠向半導體反應腔室配送高度穩定之氣相反應物流持續延長時段的裝置。
與跨容納在配送裝置中的源化學物之體積的溫度梯度，亦即溫差相關之問題可藉由採用整合至化學物配送裝置中的兩個或多於兩個獨立受控之加熱裝置來緩解。舉例而言，兩個或多於兩個獨立受控之加熱裝置可設置在化學物配送裝置中之關鍵位置處。因此兩個或多於兩個獨立受控之加熱裝置會將跨源化學物之體積的溫度梯度降至最低，且由此向反應腔室提供均一形式之氣相反應物。
此外，與不合需要之前驅體穩定時間及氣相反應物流歷經延長時段之變化相關的問題可由利用兩腔室化學用安瓿來解決，其中兩個腔室為彼此流體連接。壓力控制單元可與第二腔室中之加壓氣體進料管線結合，以使得加壓氣體可將受控壓力引入第二腔室中的源化學物之表面上。第二腔室中之源化學物上的受控壓力可由此調節第二腔室中之填充液位，亦即源化學物之暴露表面之位準。由於第一腔室流體連接至第二腔室，因此控制第二腔室中之填充液位的能力必然會產生控制，亦即調節第一腔室中之填充液位的能力。兩腔室化學物配送裝置可因此實質上維持裝置之配送部分中的載氣入口與源化學物之暴露表面之間的距離，引起穩定時間減少且使氣相反應物流歷經延長時段較穩定。
本發明之具體例可參考圖1較詳細理解，該圖1展示根據本發明 之具體例的用於向反應腔室配送氣相反應物之化學物遞送裝置的示意圖。較詳細而言，用於向反應腔室遞送氣相反應物之裝置100可包含組態成用於容納源化學物104之第一腔室102及組態成用於容納源化學物104`之第二腔室106。由於流體通道108設置於第一腔室102與第二腔室106之間，因此第一腔室102及第二腔室106可彼此流體連通。由於第一腔室102及第二腔室106為彼此流體連通，因此置於第一腔室102及第二腔室106中之源化學物104及104`可包含常見源化學物，亦即第一腔室102與第二腔室106兩者中之源化學物為相同的。
在本發明之一些具體例中，第一腔室102可利用設置於兩個腔室之間的通道114與第二腔室106部分分隔，該通道114之基部形成流體通道108之頂表面，且第一腔室102與第二腔室106之共用基部形成流體通道108之基部。在其他具體例中，物理阻擋件，諸如物理分隔件可部分設置在第一腔室102與第二腔室106之間，同時維持兩個腔室之間的不受限制之流體通道。
在本發明之一些具體例中，容納在第一腔室102中之源化學物104可填充至第一填充液位110，亦即第一填充液位110指示置於第一腔室102中的源化學物104之上部暴露表面的位準。在本發明之一些具體例中，容納在第二腔室106中之源化學物104`可填充至第二填充液位112，亦即第二填充液位112指示置於第二腔室106中的源化學物104`之上部暴露表面的位準。在平衡條件下，第一填充液位110與第二填充液位112實質上相等，其由第一腔室102與第二腔室106之間的流體連通，設置於第一與第二填充液位下方的第一腔室102與第二腔室106之間的流體通道引起。
在本發明之一些具體例中，第一填充液位110及第二填充液位可利用一或多個液位感測器來加以監測。舉例而言，液位感測器116可設置在第一腔室102中且可接觸源化學物104以使得第一腔室102中的第一填充液位110之位置可得到監測。在一些具體例中，配送裝置100亦可包括另一液位感測器 118，其設置在第二腔室106中且可接觸源化學物104`以使得第二腔室106中的第二填充液位112之位置亦可得到監測。
配送裝置100亦可包含與載氣進料管線122流體連通之第一腔室入口開口120。此外，載氣進料管線122可包括用於控制載氣向第一腔室102中流動之閥門125。第一腔室入口開口120及載氣進料管線122可組態成用於使載氣在高於第一填充液位110處流入第一腔室102中，以使源化學物104之氣相混入載氣中以產生氣相反應物。
在本發明之一些具體例中，配送裝置100亦可包含第一腔室出口開口124，其與氣體出口管線126流體連通且組態成用於自第一腔室102配送出氣相反應物。此外，氣體出口管線126可包括用於控制氣相反應物自第一腔室102流出之閥門128。氣體出口管線126可進料至半導體加工裝置之反應腔室，以使得自第一腔室102配送之氣相反應物可用於半導體製造過程中。
配送裝置100亦可包含與加壓氣體進料管線132流體連通之第二腔室入口開口130。在本發明之一些具體例中，加壓氣體進料管線132組態成用於使加壓氣體在高於第二填充液位112處流動，該加壓氣體經組態以實質上維持第一腔室102中的第一填充液位110之位準。此外，加壓氣體進料管線132可包括壓力控制單元134，其設置在加壓氣體進料管線132上且組態成用於控制第二腔室106中的第二填充液位112上方之壓力。除了壓力控制單元134之外，加壓氣體進料管線132可進一步包含用於控制加壓氣體向第二腔室106流動之閥門135。
較詳細而言，當載氣(例如氮氣或氬氣)進給至載氣進料管線122中時，載氣流入第一腔室102中的第一填充液位110上方之體積中且自源化學物獲得(pick up)氣相。源化學物混入載氣以產生可經由氣體出口管線126向反應腔室配送之氣相反應物。使載氣流入、載氣混入源化學物氣相且經由氣 體出口管線126自第一腔室配送氣相反應物之過程，會引起配送裝置100中的源化學物之體積減少，並在沒有任何校正動作下的第一填充液位之位準(進而第二填充液位之位準)將減少至低於初始位置。如先前所陳述，當第一腔室入口開口120與第一填充液位110之間的距離增加時，自第一腔室102配送的氣相前驅體之流動速率亦可發生變化，亦即可能會有所降低，導致不合需要之過程變化。為了解決第一填充液位110之位準的下降，可經由加壓氣體進料管線132將加壓氣體進給至第二腔室106中。利用壓力控制單元134，加壓氣體將以可控方式增加第二腔室106中的第二填充液位112上方之壓力，且壓力之增加將進一步降低第二腔室106中之第二填充液位112。由於第二腔室106與第一腔室102經由流體通道108為彼此流體連通，因此引起第二腔室106中之第二填充液位112降低的任何壓力將引起第一腔室102中的第一填充液位110之位準增加。因此，第一腔室入口120與第一填充液位110之間的距離之任何增加可藉由增加第二腔室106中的源化學物上方之壓力來補償。
如本文中所揭示，裝置可包括且利用包含兩個流體連接之腔室及加壓氣體進料管線的化學物配送裝置以實質上維持第一腔室中的第一填充液位之位準。此外或替代地，由於源化學物之消耗而使第一填充液位110之位準降低可藉由再添加源化學物至配送裝置100中來抵銷，由此補充所利用之源化學物且因此維持第一填充液位110之位準。因此，在本發明之一些具體例中，配送裝置100可進一步包含與氣相進料管線138流體連通之另一第二腔室入口開口136，該氣相進料管線138組態成用於使額外的源化學物104`流入第二腔室106中。此外，氣相進料管線138亦可包含用於控制額外的源化學物104`向第二腔室106中流動之閥門140。
在本發明之一些具體例中，額外的源化學物可經由第一腔室102中之合適的另一入口開口(未圖示)進給至第一腔室102中。因此，第一腔室 與第二腔室中之一或兩者可用額外的源化學物補充以維持第一腔室102中的第一填充液位110之位準。
根據本發明之具體例的化學物配送裝置之替代組態為展示於圖2A及圖2B中，其中圖2A包含化學物遞送裝置之三維示意圖，且圖2B展示穿過由圖2A中所參照之A-A平面表示的平面的相同化學物遞送裝置之橫剖面圖。應注意，圖2B中所示之橫剖面圖表示處於平衡位置之化學物遞送裝置。
較詳細而言，化學物配送裝置200包含第一腔室202，亦即內腔室，其組態成用於容納達至第一填充液位210之源化學物。化學物配送裝置200亦包含第二腔室206，亦即外腔室，其組態成用於容納達至第二填充液位212之源化學物。第一腔室202(內腔室)與第二腔室206(外腔室)經由流體通道208為彼此流體連通。
在本發明之一些具體例中，第一腔室202進一步包含與載氣進料管線222流體連通之第一腔室入口開口220，該載氣進料管線222組態成用於使載氣在高於第一填充液位210處流入第一腔室202，致使源化學物204之氣相混入載氣中以產生氣相反應物。另一閥門225可設置在載氣進料管線222上以提供對載氣流入第一腔室202中之進一步控制(參見圖2B)。
在本發明之一些具體例中，第一腔室202亦可包含第一腔室出口224，其與氣體出口管線226流體連通且組態成用於自第一腔室配送出氣相反應物。儘管圖2A與圖2B中未示出，但氣體出口管線226可延伸出去且與半導體加工裝置之反應腔室流體連通，由此使氣相反應物配送至反應腔室。氣體出口管線226可進一步包含另一閥門228，其用於提供對氣相反應物自第一腔室202流出之進一步控制(參見圖2B)。
圖2A與圖2B之化學物配送裝置亦可包含第二腔室入口開口230，其與加壓氣體進料管線234流體連通，該加壓氣體進料管線234組態成用 於使加壓氣體在高於第二填充液位212處流動，該加壓氣體經組態以實質上維持第一腔室202，亦即圖2A與圖2B之內腔室中的第一填充液位210之位準。
為了進一步控制第二腔室206中的第二填充液位212上方之壓力，化學物配送裝置200可包括設置在加壓氣體進料管線232上之壓力控制單元234，該壓力控制單元234經組態以調節第二腔室206中的第二填充液位212上方之壓力。
在一些具體例中，第二腔室206，亦即外腔室，可進一步包含與氣體出口管線238流體連通之第二腔室出口開口236，該氣體出口管線238組態成用於自第二腔室204釋放至少一部分加壓氣體，亦即經由氣體出口管線238自第二腔室206釋放加壓氣體可經進一步利用來控制第二腔室中第二填充液位上方的壓力。對第二腔室206中的第二填充液位212上方之壓力的另外控制可由設置在氣體出口管線238上之閥門240提供(參見圖2B)。
為了進一步輔助調節第一腔室202中的第一填充液位210之位準，配送裝置200可進一步包含一或多個液位感測器。舉例而言，自一或多個液位感測器記錄之資料可用於反饋電路中以使得能夠調節設置在加壓氣體進料管線232上之壓力控制單元234。作為非限制性實例，液位感測器216可設置在第一腔室202中且接觸容納在第一腔室202之源化學物204。在本發明之其他具體例中，另一液位感測器218可設置在第二腔室206中且接觸容納在第二腔室206之源化學物204`。
儘管圖2A與圖2B中未示出，但化學物配送裝置200可進一步包含於第一腔室202與第二腔室206中之一或兩者中的另一入口開口，其中該另一入口開口與氣相進料管線流體連通，該氣相進料管線組態成用於使額外的源化學物流入第一腔室202與第二腔室206中之一或兩者中。用源化學物再裝填化學物配送裝置200之能力使得可進一步調節第一腔室202中的第一填充液位210之 位準。
在本發明之一些具體例中，第一腔室202可包含內圓筒。在一些具體例中，內圓筒包含頂壁，其中該頂壁包含組態成氣體之入口及出口的多個開口220及224及組態成用於插入液位感測器216之另一開口。在一些具體例中，內圓筒進一步包含側壁及開放基部區域，該開放基部區域允許經由流體通道208與第二腔室206流體連通。
在本發明之一些具體例中，第二腔室206可包含設置成與內圓筒同心且環繞內圓筒之部分中空外圓筒(參見圖2A)。第二腔室206，亦即外圓筒可僅為部分中空的，因為第二腔室的一部分基部區域包含介於第一腔室202與第二腔室206之間的流體通道208之基部。
在本發明之其他具體例中，化學物配送裝置200包含設置於內圓筒(第一腔室202)與外圓筒(第二腔室204)之間的通道214。通道214可在形式上呈圓形且與內圓筒同心，但亦可利用其他組態。通道214可自第一腔室204之頂壁向下延伸且鄰近於內圓筒之側壁，在裝置之基部之前終止，通道214之基部包含第一腔室202與第二腔室206之間的流體通道208的一部分頂壁。
本發明之具體例亦可包含用於加熱化學物配送裝置之裝置，且尤其包含用於將跨配送裝置中所容納的源化學物之體積的溫度梯度，亦即熱差降至最低的裝置。本發明之具體例可包含加熱圖2A及圖2B之化學物配送裝置200的裝置，但可利用本文所述之裝置均勻加熱替代化學物配送裝置。
較詳細而言且參考圖3，溫度受控化學物配送裝置300可包含第一加熱裝置302、第二加熱裝置304及化學物配送裝置200。如本文中先前所述，化學物配送裝置200可包含第一腔室202，亦即內圓筒，及第二腔室206，亦即外圓筒。設置於第一腔室202與第二腔室204之間的為通道214，其可在形式上呈圓形且與第一腔室202同心，該通道214自第一腔室之頂壁向下延伸，鄰 近於第一腔室202之側壁。
在本發明之一些具體例中，第一加熱裝置302可置放在設置於內圓筒與外圓筒之間的通道214中。作為非限制性實例，第一加熱裝置302可包含具有與設置於內圓筒與外圓筒之間的通道214實質上相同之直徑的中空圓筒。因此，加熱裝置302可插入內圓筒與外圓筒之間的通道214中，以向內圓筒(第一腔室202)及外圓筒(第二腔室204)兩者供熱。作為非限制性實例，第一加熱裝置302可包含可組態成用於插入通道214中之帶式加熱器。
在本發明之一些具體例中，第二加熱裝置304可經利用而向化學物配送裝置200提供進一步溫度控制。第二加熱裝置304可包含中空圓筒且可圍繞化學物配送裝置200之外圓筒的外表面設置。舉例而言，作為非限制性實例，第二加熱裝置304可包含圍繞化學物配送裝置200之外圓筒的外表面設置，亦即圍繞該外表面捲繞，且可鄰近於該外表面的另一帶式加熱器。
在本發明之一些具體例中，第一加熱裝置302及第二加熱裝置304可獨立受控，以使得源化學物之最高溫度與源化學物之最低溫度之間的溫度梯度，亦即溫差可經控制而處於低於2℃、或低於1℃、或甚至低於0.5℃之溫度內。應注意，源化學物之溫度梯度可指整個源化學物體積，亦即容納在第一腔室202中之源化學物與容納在第二腔室204中之源化學物兩者的溫度梯度。在本發明之替代性具體例中，源化學物之溫度梯度可僅指容納在第一腔室202中的源化學物之溫度梯度。
本發明之具體例可因此包含一種高容量化學物配送裝置，其能夠提供穩定之氣相反應物流持續延長時段。舉例而言，在一些具體例中，化學物配送裝置可容納總體積大於1公升、或大於2公升、或甚至大於4公升之源化學物。在本發明之一些具體例中，化學物配送裝置可能夠向反應腔室連續配送氣相反應物持續大於200小時、或大於300小時、或甚至大於400小時之時段。 在本發明之一些具體例中，本發明之化學物配送裝置可展示經減少之穩定時間，亦即使化學物配送裝置中之蒸氣壓達至穩態值之時間。舉例而言，在一些具體例中，化學物配送裝置中的源化學物之蒸氣壓可在低於500秒之時段、或低於300秒之時段或甚至低於100秒之時段之後達至穩態值。
本發明之具體例亦可包含用於向反應腔室配送氣相反應物之方法。本發明之方法可參照圖4進一步詳述，該圖4展示用於向反應腔室配送氣相反應物之方法400的過程流程。較詳細而言，方法400可包含過程區塊410，其包含設置第一腔室以容納達至第一填充液位之源化學物。第一腔室可包含一部分的化學用安瓿且可由抗腐蝕材料製成，諸如比方為石英材料及不鏽鋼。源化學物可包含固體(在室溫下)或氣相且可利用一定填充過程引入至第一腔室中，以使得源化學物可填充第一腔室至第一填充液位，其中該第一填充液位可指代第一腔室中的源化學物之上部暴露表面的位準。
方法400可繼續進行過程區塊420，其包含設置與第一腔室流體連通之第二腔室。同樣，第二腔室可包含一部分的化學用安瓿且可由抗腐蝕材料，諸如石英材料及不鏽鋼製成。設置於第一腔室與第二腔室之間的可為流體通道，其可用於在第一腔室與第二腔室之間提供流體連通。在本發明之一些具體例中，第二腔室可填充有達至第二填充液位之源化學物，其中該第二填充液位可指代第二腔室中的源化學物上部暴露表面的位準。由於第一腔室與第二腔室流體連通，因此用源化學物填充第一腔室或第二腔室中之任一者的過程將引起填充兩個腔室，其限制條件為兩個腔室之間的流體通道設置在第一腔室與第二腔室之基部處。此外，由於第一腔室與第二腔室呈流體連通，第一填充液位與第二填充液位在平衡條件下為實質上相等。
方法400可繼續進行過程區塊430，其包含使載氣流入第一腔室中以產生氣相反應物。較詳細而言，第一腔室可包含與載氣進料管線流體連通 之入口開口。一或多種載氣(例如氮氣或氬氣)可經由載氣進料管線引入第一腔室中，且可使源化學物之氣相混入載氣中，由此產生氣相反應物。由源化學物氣相製造氣相反應物之結果為消耗掉容納在第一腔室中的一部分的源化學物。第一腔室中的源化學物之消耗通常將引起第一腔室中的源化學物之第一填充液位之位準下降，然而，如本文所述，本發明的方法使第一腔室中的第一填充液位之下降被抵銷。
方法400可繼續進行過程區塊440，其包含自第一腔室配送氣相反應物。較詳細而言，可經由與第一腔室流體連通之氣體出口管線將氣相反應物輸送出第一腔室。將氣相反應物輸送出第一腔室，亦即輸送出化學物配送裝置，可經由使載體流入且流出第一腔室來達成。在一些本發明之一些具體例中，來自第一腔室之氣體出口管線可與半導體加工裝置之反應腔室流體連通，以使得氣相反應物可用於半導體製造過程中。
方法400可繼續進行過程區塊450，其包含控制容納在第二腔室中的源化學物上方之壓力。較詳細而言，容納在第二腔室的源化學物上方之壓力可由壓力控制單元及組態成用於使加壓氣體流入第二腔室中之加壓氣體管線來控制。加壓氣體可積聚在第二腔室中的源化學物之第二填充液位上方，且亦可在容納在第二腔室的源化學物上施加向下的壓力。向下的壓力可引起第二填充液位下降，其反過來將引起第一腔室中的第一填充液位升高，因為第一腔室與第二腔室為彼此流體連通。因此，控制容納在第二腔室中的源化學物上方之壓力會直接控制第一腔室中之第一填充液位。在本發明之一些具體例中，第二腔室所含源化學物上方之壓力可經由壓力控制單元、加壓氣體管線及設置在加壓氣體管線上之閥門來控制。此外，包含於第二腔室中的源化學物上方之壓力的控制可經由可用於自第二腔室釋放出一部分加壓氣體的氣體出口管線來控制。因此，在一些具體例中，該方法可包含經由第二腔室出口開口自第二腔室 釋放至少一部分加壓氣體。
方法400可繼續進行過程區塊460，其包含調節第一填充液位處於實質上恆定之液位。較詳細而言，第二腔室中的源化學物上方之壓力可經控制而直接調節第一腔室中的第一填充液位之位準。因此，當經由形成氣相反應物而消耗掉第一腔室中之源化學物時，可增加第二腔室中的源化學物上方之壓力來調節第一填充液位處於實質上恆定之液位。為了進一步實現調節第一填充液位處於實質上恆定之液位，可利用一或多個液位感測器來監測化學物配送裝置中之液位，且向與加壓氣體管線結合之壓力控制單元提供控制信號。因此，在本發明之一些具體例中，調節第一填充液位處於實質上恆定之液位進一步包含利用液體感測器監測第一腔室中之第一填充液位。液體感測器可監測第一填充液位之位準的下降且為壓力控制單元提供控制信號，由此增加第二腔室中的源化學物上方之壓力，進而抵銷第一腔室中的第一填充液位之位準的任何變化。在本發明之一些具體例中，另一液位感測器可設置在第二腔室中且與源化學物接觸以監測第二填充液位。
此外或替代地，本發明的方法可包含藉由向第一腔室或第二腔室任一者供應額外的源化學物而調節第一填充液位處於實質上恆定之液位。舉例而言，一或多個額外入口進料管線可與第一腔室及第二腔室結合，且入口進料管線可用於在消耗掉源化學物時，將額外的源化學物引入化學物配送裝置中。
上文所描述之本發明之實例具體例並不限制本發明的範疇，此係由於此等具體例僅為本發明之具體例之實例，其由所附申請專利範圍及其法定等效物定義。任何等效具體例意欲處於本發明之範疇內。實際上，除本文中所示及所描述者之外，本發明之各種修改(諸如所描述之元件的替代性適用組合)根據描述對熟習本技藝者而言可變得顯而易見。該等修改及具體例同樣意 欲屬於所附申請專利範圍之範疇內。

Claims (24)

  1. 一種裝置，其用於向反應腔室配送氣相反應物，該裝置包含：第一腔室，其組態成用於以第一填充液位容納源化學物；第二腔室，其組態成用於以第二填充液位容納該源化學物，且經由該第一填充液位及該第二填充液位下方的流體通道而與該第一腔室呈流體連通；第一腔室入口開口，其與載氣進料管線流體連通，該載氣進料管線組態成用於使載氣流入該第一腔室中以使該源化學物之氣相混入該載氣中以產生該氣相反應物；第一腔室出口開口，其與氣體出口管線流體連通且組態成用於自該第一腔室配送該氣相反應物；及第二腔室入口開口，其與設有流動控制器之加壓氣體進料管線流體連通，該流動控制器組態成用於控制該第二腔室中的加壓氣體之流動以控制該第一腔室中的該第一填充液位。
  2. 如請求項1之裝置，其中，該載氣進料管線組態成用於使載體在高於該第一填充液位處流入該第一腔室中。
  3. 如請求項1之裝置，其進一步包含與氣體出口管線流體連通之第二腔室出口開口，該氣體出口管線經組態以自該第二腔室釋放至少一部分該加壓氣體。
  4. 如請求項1之裝置，其進一步包含以可操作方式連接至該加壓氣體進料管線之流動控制器以控制該加壓氣體之流動之控制單元。
  5. 如請求項4之裝置，其進一步包含與該控制單元以可操作方式連接之液位感測器，用於量測該第一腔室中之該第一填充液位，且該控制單元經程式化以基於所量測之該第一填充液位，經由該流動控制器控制該加壓氣體向該第二腔室中流動，以將該第一填充液位調節至實質上恆定之液位。
  6. 如請求項1之裝置，其進一步包含設置在該第二腔室中且接觸該源化學物之另一液位感測器。
  7. 如請求項1之裝置，其進一步包含與氣相進料管線流體連通之另一第二腔室入口開口，該氣相進料管線組態成用於使額外的源化學物流入該第二腔室中。
  8. 如請求項1之裝置，其中，該第一腔室包含內圓筒，且該第二腔室包含設置成與該內圓筒同心且環繞該內圓筒之部分中空外圓筒。
  9. 如請求項8之裝置，其進一步包含設置於該內圓筒與該外圓筒之間的加熱裝置。
  10. 如請求項1之裝置，其進一步包含圍繞該第一腔室設置之加熱裝置。
  11. 如請求項1之裝置，其進一步包含圍繞該第二腔室設置之加熱裝置。
  12. 如請求項1之裝置，其中，容納在該第一腔室與該第二腔室中的源化學物之總體積大於4公升。
  13. 如請求項1之裝置，其中，跨該源化學物之總體積的溫度梯度低於1℃。
  14. 一種用於向反應腔室配送氣相反應物之方法，該方法包含：設置第一腔室，用於以第一填充液位容納源化學物；設置第二腔室，其組態成用於以第二填充液位容納該源化學物，經由該第一填充液位及該第二填充液位下方的流體通道而與該第一腔室流體連通；經由第一腔室入口開口使載氣流入該第一腔室中，其中使該載氣流入該第一腔室中會使該源化學物之氣相混入該載氣中以產生該氣相反應物；經由與出口氣體管線流體連通的第一腔室出口開口自該第一腔室配送該氣 相反應物；及經由第二腔室入口開口控制加壓氣體向該第二腔室中的流動以將該第一填充液位調節至實質上恆定之液位。
  15. 如請求項14之方法，其進一步包含經由第二腔室出口開口自該第二腔室釋放至少一部分該加壓氣體。
  16. 如請求項14之方法，其中，控制加壓氣體向該第二腔室中的流動進一步包含利用壓力控制單元控制該第二腔室中的該源化學物上方之壓力。
  17. 如請求項14之方法，其中，調節該第一填充液位處於實質上恆定之液位進一步包含利用液位感測器監測該第一腔室中之該第一填充液位。
  18. 如請求項14之方法，其進一步包含利用另一液位感測器監測該第二腔室中之該第二填充液位。
  19. 如請求項14之方法，其中，維持該第一填充液位處於實質上恆定之液位進一步包含向該第一腔室或該第二腔室任一者供應額外的源化學物。
  20. 如請求項14之方法，其中，該第一腔室包含內圓筒，且該第二腔室包含設置成與該內圓筒同心且環繞該內圓筒之部分中空外圓筒，其中通道設置於該內圓筒與該外圓筒之間。
  21. 如請求項20之方法，其進一步包含在設置於該內圓筒與該外圓筒之間的該通道中設置加熱裝置。
  22. 如請求項20之方法，其進一步包含圍繞該外圓筒之外表面設置加熱裝置。
  23. 如請求項14之方法，其進一步包含以低於1℃之溫度梯度將該源化學物加熱至大於約80℃之溫度。
  24. 一種用於向反應腔室配送氣相反應物之方法，該方法包含：設置第一腔室及第二腔室，其中該第一腔室與該第二腔室為彼此流體連 通；用源化學物填充該第一腔室至第一填充液位；用該源化學物填充該第二腔室至第二填充液位；消耗掉容納在該第一腔室中的一部分該源化學物；及增加容納在該第二腔室中的該源化學物之第二填充液位上方之壓力以實質上保持該第一腔室中之該第一填充液位。
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