ATE280435T1 - Vorrichtung und verfahren zur behandlung von halbleiter-plättchen - Google Patents
Vorrichtung und verfahren zur behandlung von halbleiter-plättchenInfo
- Publication number
- ATE280435T1 ATE280435T1 AT98101824T AT98101824T ATE280435T1 AT E280435 T1 ATE280435 T1 AT E280435T1 AT 98101824 T AT98101824 T AT 98101824T AT 98101824 T AT98101824 T AT 98101824T AT E280435 T1 ATE280435 T1 AT E280435T1
- Authority
- AT
- Austria
- Prior art keywords
- wafer
- rotating rods
- ultrasonic
- processing bath
- semiconductor plates
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
Landscapes
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9021796A JPH10223585A (ja) | 1997-02-04 | 1997-02-04 | ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE280435T1 true ATE280435T1 (de) | 2004-11-15 |
Family
ID=12065023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98101824T ATE280435T1 (de) | 1997-02-04 | 1998-02-03 | Vorrichtung und verfahren zur behandlung von halbleiter-plättchen |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6337030B1 (de) |
| EP (1) | EP0856873B1 (de) |
| JP (1) | JPH10223585A (de) |
| KR (1) | KR100416963B1 (de) |
| CN (1) | CN1108632C (de) |
| AT (1) | ATE280435T1 (de) |
| AU (1) | AU722096B2 (de) |
| CA (1) | CA2228571C (de) |
| DE (1) | DE69827051T2 (de) |
| SG (1) | SG73497A1 (de) |
| TW (1) | TW473863B (de) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6391067B2 (en) | 1997-02-04 | 2002-05-21 | Canon Kabushiki Kaisha | Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus |
| JPH10223585A (ja) | 1997-02-04 | 1998-08-21 | Canon Inc | ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法 |
| US6767840B1 (en) * | 1997-02-21 | 2004-07-27 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| US6520191B1 (en) | 1998-10-19 | 2003-02-18 | Memc Electronic Materials, Inc. | Carrier for cleaning silicon wafers |
| JP2000124183A (ja) * | 1998-10-19 | 2000-04-28 | Memc Kk | シリコンウェーハ洗浄用キャリア |
| US6412503B1 (en) * | 1999-06-01 | 2002-07-02 | Applied Materials, Inc. | Magnetically coupled substrate roller |
| DE19934300C2 (de) * | 1999-07-21 | 2002-02-07 | Steag Micro Tech Gmbh | Vorrichtung zum Behandeln von Substraten |
| EP1139396A3 (de) * | 2000-03-31 | 2003-08-27 | Texas Instruments Incorporated | Haltevorrichtung und Verfahren für einheitliche stromlose Metallabscheidung auf Anschlussflächen integrierter Schaltungen |
| US20030181042A1 (en) * | 2002-03-19 | 2003-09-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching uniformity in wet bench tools |
| US20030211427A1 (en) * | 2002-05-07 | 2003-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for thick film photoresist stripping |
| KR100710160B1 (ko) * | 2002-10-07 | 2007-04-20 | 엘지.필립스 엘시디 주식회사 | 유리기판 파손방지용 카세트 |
| US7040330B2 (en) * | 2003-02-20 | 2006-05-09 | Lam Research Corporation | Method and apparatus for megasonic cleaning of patterned substrates |
| JP4162524B2 (ja) * | 2003-03-27 | 2008-10-08 | 大日本スクリーン製造株式会社 | 基板処理方法およびその装置 |
| US20040238119A1 (en) * | 2003-05-26 | 2004-12-02 | Ching-Yu Chang | [apparatus and method for etching silicon nitride thin film ] |
| JP4509501B2 (ja) * | 2003-07-31 | 2010-07-21 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 円板状部材のエッチング方法及び装置 |
| US7415985B2 (en) * | 2003-09-24 | 2008-08-26 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning and drying apparatus |
| US20050132332A1 (en) * | 2003-12-12 | 2005-06-16 | Abhay Sathe | Multi-location coordinated test apparatus |
| US7612483B2 (en) * | 2004-02-27 | 2009-11-03 | Georgia Tech Research Corporation | Harmonic cMUT devices and fabrication methods |
| US7714531B2 (en) * | 2004-03-18 | 2010-05-11 | Panasonic Corporation | Power system and management method thereof |
| US20050211379A1 (en) * | 2004-03-29 | 2005-09-29 | Hung-Wen Su | Apparatus and method for removing metal from wafer edge |
| KR100604051B1 (ko) * | 2004-06-30 | 2006-07-24 | 동부일렉트로닉스 주식회사 | 게이트 산화막의 전세정방법 |
| KR100644054B1 (ko) * | 2004-12-29 | 2006-11-10 | 동부일렉트로닉스 주식회사 | 세정 장치 및 게이트 산화막의 전세정 방법 |
| US7730898B2 (en) | 2005-03-01 | 2010-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer lifter |
| US7531426B2 (en) * | 2005-08-19 | 2009-05-12 | Honeywell International Inc. | Approach to high temperature wafer processing |
| JP4705517B2 (ja) * | 2006-05-19 | 2011-06-22 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
| KR100766417B1 (ko) | 2006-07-11 | 2007-10-12 | 이기정 | 수납 부재 및 이를 포함하는 박판화 장치 |
| DE102006059810A1 (de) * | 2006-12-15 | 2008-06-19 | Rena Sondermaschinen Gmbh | Vorrichtung und Verfahren zum Reinigen von Gegenständen, insbesondere von dünnen Scheiben |
| US8327861B2 (en) | 2006-12-19 | 2012-12-11 | Lam Research Corporation | Megasonic precision cleaning of semiconductor process equipment components and parts |
| KR101104016B1 (ko) * | 2008-11-04 | 2012-01-06 | 주식회사 엘지실트론 | 웨이퍼 처리 장치 및 이에 사용되는 배럴과, 웨이퍼 처리 방법 |
| CN101844111A (zh) * | 2009-04-08 | 2010-09-29 | 佛山市兴民科技有限公司 | 一种超声浮选方法及其装置和用途 |
| KR101009584B1 (ko) | 2010-11-10 | 2011-01-20 | 주식회사 에이에스이 | 웨이퍼 세정장치 |
| JP5696491B2 (ja) * | 2011-01-20 | 2015-04-08 | 株式会社Sumco | ウェーハ洗浄装置及び洗浄方法 |
| JP2012178458A (ja) * | 2011-02-25 | 2012-09-13 | Fujitsu Ltd | 半導体装置の製造方法及び半導体基板の洗浄方法 |
| CN102787315B (zh) * | 2011-05-19 | 2015-01-07 | 昆山西钛微电子科技有限公司 | 单片杯式旋转蚀刻装置 |
| DE102012214316A1 (de) | 2012-08-10 | 2014-02-13 | Siltronic Ag | Halterung für eine Vielzahl von scheibenförmigen Werkstücken |
| DE102013204830B4 (de) * | 2013-03-19 | 2014-10-09 | Siltronic Ag | Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe mit einem Ätzmedium |
| CN104746146A (zh) * | 2013-12-25 | 2015-07-01 | 新奥光伏能源有限公司 | 一种单晶硅片的制绒方法 |
| US9562291B2 (en) | 2014-01-14 | 2017-02-07 | Mei, Llc | Metal etch system |
| CN104465464A (zh) * | 2014-12-16 | 2015-03-25 | 中国电子科技集团公司第四十六研究所 | 一种小尺寸硫化镉单晶片超声清洗架 |
| CN106540910A (zh) * | 2016-12-09 | 2017-03-29 | 苏州爱彼光电材料有限公司 | 游星轮片清洗架 |
| CN108206145B (zh) * | 2016-12-20 | 2020-05-19 | 有研半导体材料有限公司 | 一种实现相邻晶圆对转的腐蚀装置及腐蚀方法 |
| JP6860447B2 (ja) * | 2017-02-15 | 2021-04-14 | キオクシア株式会社 | 基板処理装置 |
| DE102018103808A1 (de) * | 2018-02-20 | 2019-08-22 | AP&S International GmbH | Vorrichtung zur stromlosen Metallisierung einer Zieloberfläche wenigstens eines Werkstücks |
| US12074041B2 (en) * | 2018-06-29 | 2024-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet bench structure |
| CN111477561A (zh) * | 2019-01-23 | 2020-07-31 | 弘塑科技股份有限公司 | 批次基板湿式处理装置及批次基板湿式处理方法 |
| CN112435955B (zh) * | 2019-08-26 | 2024-04-16 | 合肥晶合集成电路股份有限公司 | 一种晶圆裂片的支撑装置及其固定方法 |
| CN111063642B (zh) * | 2019-11-20 | 2023-04-14 | 至微半导体(上海)有限公司 | 具有限位功能的活动式多轴向连杆装置 |
| CN110931401B (zh) * | 2020-01-02 | 2022-06-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | 晶圆片盒旋转装置及片盒旋转升降设备 |
| CN113066753B (zh) * | 2021-03-10 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 晶片升降支撑装置及清洗设备 |
| CN121463743A (zh) * | 2021-10-19 | 2026-02-03 | 杭州众硅电子科技有限公司 | 一种用于清洗晶圆的排列式兆声清洗装置 |
| CN116598252B (zh) * | 2023-07-13 | 2023-10-03 | 南轩（天津）科技有限公司 | 一种用于硅片浸蚀均匀的旋转结构 |
Family Cites Families (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3473670A (en) | 1968-01-30 | 1969-10-21 | Fluoroware Inc | Article supporting basket |
| US3782522A (en) | 1972-09-18 | 1974-01-01 | Fluoroware Inc | Transfer mechanism |
| US3964957A (en) * | 1973-12-19 | 1976-06-22 | Monsanto Company | Apparatus for processing semiconductor wafers |
| US3893869A (en) | 1974-05-31 | 1975-07-08 | Rca Corp | Megasonic cleaning system |
| US4191295A (en) | 1978-08-14 | 1980-03-04 | Rca Corporation | Processing rack |
| DE3435931A1 (de) | 1984-09-29 | 1986-04-03 | Bayer Ag, 5090 Leverkusen | Verfahren zur entschwefelung von rauchgasen |
| JPS61228629A (ja) | 1985-04-02 | 1986-10-11 | Mitsubishi Electric Corp | ウエハ等薄板体の表面処理装置 |
| JPH0691062B2 (ja) | 1985-04-24 | 1994-11-14 | 日本電気株式会社 | 半導体スライスの洗浄方法 |
| WO1987006862A1 (en) | 1986-05-16 | 1987-11-19 | Eastman Kodak Company | Ultrasonic cleaning method and apparatus |
| JPS62274730A (ja) | 1986-05-23 | 1987-11-28 | Nec Corp | エツチング装置 |
| JPS62281430A (ja) | 1986-05-30 | 1987-12-07 | Hitachi Electronics Eng Co Ltd | 拡散前ウエハ洗浄方法および洗浄装置 |
| JPH01143223A (ja) | 1987-11-28 | 1989-06-05 | Toshiba Corp | 半導体基板の表面処理方法 |
| FR2626261B1 (fr) | 1988-01-26 | 1992-08-14 | Recif Sa | Appareil elevateur de plaquettes de silicium notamment |
| KR970011658B1 (ko) | 1988-02-29 | 1997-07-12 | 도오교오 에레구토론 사가미 가부시끼가이샤 | 웨이퍼 지지장치 |
| JPH01304733A (ja) | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | 半導体ウエハの洗浄装置 |
| KR910006087B1 (ko) | 1988-06-29 | 1991-08-12 | 삼성반도체통신 주식회사 | 반도체 제조용 웨이퍼 세정기 |
| US4927781A (en) | 1989-03-20 | 1990-05-22 | Miller Robert O | Method of making a silicon integrated circuit waveguide |
| JPH0377347A (ja) | 1989-08-19 | 1991-04-02 | Mitsubishi Electric Corp | ウエハのファセットアライメント方法 |
| JPH03231428A (ja) | 1990-02-07 | 1991-10-15 | Hitachi Cable Ltd | 半導体ウエハの洗浄方法 |
| JPH03257826A (ja) | 1990-03-07 | 1991-11-18 | Shimada Phys & Chem Ind Co Ltd | 半導体ウェハの洗浄方法 |
| JPH0785471B2 (ja) | 1990-10-16 | 1995-09-13 | 信越半導体株式会社 | エッチング装置 |
| US5275184A (en) | 1990-10-19 | 1994-01-04 | Dainippon Screen Mfg. Co., Ltd. | Apparatus and system for treating surface of a wafer by dipping the same in a treatment solution and a gate device for chemical agent used in the apparatus and the system |
| JPH071796Y2 (ja) | 1990-12-28 | 1995-01-18 | 大日本スクリーン製造株式会社 | 浸漬型基板処理装置 |
| US5174045A (en) | 1991-05-17 | 1992-12-29 | Semitool, Inc. | Semiconductor processor with extendible receiver for handling multiple discrete wafers without wafer carriers |
| JPH0555180A (ja) | 1991-08-29 | 1993-03-05 | Fujitsu Ltd | 大型基板用リフトオフ装置とその調整方法 |
| JPH05152277A (ja) | 1991-11-27 | 1993-06-18 | Nec Kansai Ltd | ウエツトエツチング装置 |
| JP3157030B2 (ja) | 1992-01-31 | 2001-04-16 | キヤノン株式会社 | 半導体基体とその作製方法 |
| KR0163362B1 (ko) | 1992-03-05 | 1999-02-01 | 이노우에 아키라 | 세정장치용 처리조 |
| JP3018727B2 (ja) * | 1992-04-15 | 2000-03-13 | 日本電気株式会社 | 半導体製造ウェット処理装置 |
| JPH05335401A (ja) | 1992-05-28 | 1993-12-17 | Mitsubishi Electric Corp | 半導体ウエハ用移送装置 |
| JP3005117B2 (ja) | 1992-06-26 | 2000-01-31 | キヤノン株式会社 | 電子写真感光体用支持体の洗浄方法 |
| JPH0621030A (ja) | 1992-07-01 | 1994-01-28 | Hitachi Cable Ltd | 半導体ウエハの洗浄方法 |
| JPH06168928A (ja) | 1992-11-30 | 1994-06-14 | Nec Kansai Ltd | ウェーハ洗浄装置およびウェーハ洗浄方法 |
| JPH0722495A (ja) | 1993-06-29 | 1995-01-24 | Kokusai Electric Co Ltd | ウェーハ姿勢合わせ装置 |
| US5356300A (en) | 1993-09-16 | 1994-10-18 | The Whitaker Corporation | Blind mating guides with ground contacts |
| JPH07106292A (ja) | 1993-09-29 | 1995-04-21 | Kawasaki Steel Corp | 半導体ウエハの洗浄装置 |
| US5340437A (en) * | 1993-10-08 | 1994-08-23 | Memc Electronic Materials, Inc. | Process and apparatus for etching semiconductor wafers |
| JP2888409B2 (ja) | 1993-12-14 | 1999-05-10 | 信越半導体株式会社 | ウェーハ洗浄槽 |
| US5672212A (en) * | 1994-07-01 | 1997-09-30 | Texas Instruments Incorporated | Rotational megasonic cleaner/etcher for wafers |
| US5520205A (en) | 1994-07-01 | 1996-05-28 | Texas Instruments Incorporated | Apparatus for wafer cleaning with rotation |
| JPH0878387A (ja) | 1994-09-01 | 1996-03-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5593505A (en) * | 1995-04-19 | 1997-01-14 | Memc Electronic Materials, Inc. | Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface |
| JP3177729B2 (ja) | 1995-05-12 | 2001-06-18 | 東京エレクトロン株式会社 | 処理装置 |
| JPH0910709A (ja) | 1995-06-30 | 1997-01-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| TW355815B (en) | 1996-05-28 | 1999-04-11 | Canon Kasei Kk | Cleaning methods of porous surface and semiconductor surface |
| JPH10150013A (ja) | 1996-11-20 | 1998-06-02 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JPH10223585A (ja) | 1997-02-04 | 1998-08-21 | Canon Inc | ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法 |
| TW504041U (en) | 1997-02-21 | 2002-09-21 | Canon Kk | Wafer processing apparatus |
| JP3847935B2 (ja) | 1998-01-09 | 2006-11-22 | キヤノン株式会社 | 多孔質領域の除去方法及び半導体基体の製造方法 |
-
1997
- 1997-02-04 JP JP9021796A patent/JPH10223585A/ja not_active Withdrawn
-
1998
- 1998-01-29 US US09/015,809 patent/US6337030B1/en not_active Expired - Fee Related
- 1998-02-02 CA CA002228571A patent/CA2228571C/en not_active Expired - Fee Related
- 1998-02-03 EP EP98101824A patent/EP0856873B1/de not_active Expired - Lifetime
- 1998-02-03 AT AT98101824T patent/ATE280435T1/de not_active IP Right Cessation
- 1998-02-03 TW TW087101316A patent/TW473863B/zh not_active IP Right Cessation
- 1998-02-03 DE DE69827051T patent/DE69827051T2/de not_active Expired - Fee Related
- 1998-02-03 AU AU52897/98A patent/AU722096B2/en not_active Ceased
- 1998-02-04 KR KR10-1998-0003020A patent/KR100416963B1/ko not_active Expired - Fee Related
- 1998-02-04 CN CN98103730A patent/CN1108632C/zh not_active Expired - Fee Related
- 1998-02-04 SG SG1998000238A patent/SG73497A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN1108632C (zh) | 2003-05-14 |
| AU5289798A (en) | 1998-08-06 |
| KR100416963B1 (ko) | 2004-03-26 |
| DE69827051D1 (de) | 2004-11-25 |
| AU722096B2 (en) | 2000-07-20 |
| EP0856873A3 (de) | 2001-08-29 |
| EP0856873B1 (de) | 2004-10-20 |
| EP0856873A2 (de) | 1998-08-05 |
| KR19980071052A (ko) | 1998-10-26 |
| CA2228571A1 (en) | 1998-08-04 |
| CN1192579A (zh) | 1998-09-09 |
| DE69827051T2 (de) | 2005-09-08 |
| TW473863B (en) | 2002-01-21 |
| US6337030B1 (en) | 2002-01-08 |
| JPH10223585A (ja) | 1998-08-21 |
| CA2228571C (en) | 2003-04-29 |
| SG73497A1 (en) | 2000-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE280435T1 (de) | Vorrichtung und verfahren zur behandlung von halbleiter-plättchen | |
| DE69937747D1 (de) | Vorrichtung und verfahren zur kontrolle einer akustischen behandlung | |
| ATE175520T1 (de) | Plättchenbehandlungssystem | |
| EP0633997A4 (de) | Vorrichtung zur schnellen thermischen behandlung zur herstellung von halbleiterwafers. | |
| DE69120193D1 (de) | Batchverfahren und Vorrichtung zur Behandlung von Halbleiterscheiben | |
| ATE243098T1 (de) | Vorrichtung zur bearbeitung von betonsteinen | |
| CA2229975A1 (en) | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method | |
| DE3879451D1 (de) | Verfahren und vorrichtung zur ueberwachung des betriebes von drehenden maschinen mittels mitlaufend erzeugter und wiederabgetasteter funktionen. | |
| FR2530158B1 (fr) | Procede et appareil pour realiser des reactions chimiques spatialement uniformes, non thermiques et avec excitation exterieure | |
| DE69936890D1 (de) | Vorrichtung zur Behandlung von Ischämie | |
| DE69130987D1 (de) | Vorrichtung zur Behandlung von Halbleiter-Plättchen | |
| FR2594529B1 (fr) | Appareil pour traitements thermiques de pieces minces, telles que des plaquettes de silicium | |
| DE69707219D1 (de) | Verfahren zum Herstellen von Silizium-Halbleiter Einzelsubstrat | |
| DE19983614T1 (de) | Plattenlaufwerkverfahren und Vorrichtung zum dynamischen Einstellen von Suchvorgängen | |
| ATE326064T1 (de) | Integriertes halbleiterscheibenprozesssystems | |
| DE69100619D1 (de) | Verfahren und vorrichtung für die aufarbeitung von flüssigen, bei der photographischen entwicklung anfallenden abfaellen. | |
| DE69022269D1 (de) | Verfahren zur thermischen Behandlung von Silizium. | |
| DE3767350D1 (de) | Verfahren und vorrichtung zur aufbereitung von speisewasser mittels ozon fuer die umkehrosmose. | |
| EP0128159A4 (de) | Vorrichtung und verfahren zur thermischen behandlung von halbleitersubstraten. | |
| DE69840417D1 (de) | Verfahren und vorrichtung zur behandlung von abfallmaterial | |
| ATA4099A (de) | Vorrichtung zur chemischen behandlung von wafern | |
| DE69909854D1 (de) | Vorrichtung zur Behandlung von festem Abfall | |
| EP1052688A4 (de) | Verfahren und vorrichtung zur scheibenbehandlung | |
| EP0606648A3 (de) | Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Herstellung von Halbleitereinrichtungen. | |
| DE3786604D1 (de) | Verfahren zur behandlung von vorsensibilisierten flachdruckplatten und vorrichtung dazu. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |