ATE525676T1 - Positiv arbeitende resistzusammensetzung - Google Patents

Positiv arbeitende resistzusammensetzung

Info

Publication number
ATE525676T1
ATE525676T1 AT03012142T AT03012142T ATE525676T1 AT E525676 T1 ATE525676 T1 AT E525676T1 AT 03012142 T AT03012142 T AT 03012142T AT 03012142 T AT03012142 T AT 03012142T AT E525676 T1 ATE525676 T1 AT E525676T1
Authority
AT
Austria
Prior art keywords
resistant composition
positive working
acid
positive
aii
Prior art date
Application number
AT03012142T
Other languages
English (en)
Inventor
Kazuyoshi Mizutani
Shinichi Kanna
Tomoya Sasaki
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002158822A external-priority patent/JP4018454B2/ja
Priority claimed from JP2002158821A external-priority patent/JP4073253B2/ja
Priority claimed from JP2002161617A external-priority patent/JP4073255B2/ja
Priority claimed from JP2002285486A external-priority patent/JP4056345B2/ja
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of ATE525676T1 publication Critical patent/ATE525676T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AT03012142T 2002-05-31 2003-06-02 Positiv arbeitende resistzusammensetzung ATE525676T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002158822A JP4018454B2 (ja) 2002-05-31 2002-05-31 ポジ型レジスト組成物
JP2002158821A JP4073253B2 (ja) 2002-05-31 2002-05-31 ポジ型レジスト組成物
JP2002161617A JP4073255B2 (ja) 2002-06-03 2002-06-03 ポジ型レジスト組成物
JP2002285486A JP4056345B2 (ja) 2002-09-30 2002-09-30 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
ATE525676T1 true ATE525676T1 (de) 2011-10-15

Family

ID=29424667

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03012142T ATE525676T1 (de) 2002-05-31 2003-06-02 Positiv arbeitende resistzusammensetzung

Country Status (4)

Country Link
US (1) US6939662B2 (de)
EP (5) EP2278399B1 (de)
KR (2) KR100955454B1 (de)
AT (1) ATE525676T1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI284779B (en) * 2002-06-07 2007-08-01 Fujifilm Corp Photosensitive resin composition
US6830871B2 (en) * 2002-08-19 2004-12-14 Fuji Photo Film Co., Ltd. Chemical amplification type resist composition
AU2003280571A1 (en) * 2002-10-29 2004-05-25 Jsr Corporation Radiation-sensitive resin composition
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
JP4166598B2 (ja) * 2003-03-12 2008-10-15 富士フイルム株式会社 ポジ型レジスト組成物
JP4565820B2 (ja) * 2003-07-07 2010-10-20 ダイセル化学工業株式会社 ６−トリフルオロメチル−２−ビニルオキシ−４−オキサトリシクロ［４．２．１．０３，７］ノナン−５−オン、及び高分子化合物
EP1649322A4 (de) * 2003-07-17 2007-09-19 Honeywell Int Inc Planarisierungsfilme für fortschrittliche mikroelektronsiche anwendungen und einrichtungen und herstellungsverfahren dafür
JP4377174B2 (ja) * 2003-07-25 2009-12-02 富士フイルム株式会社 ポジ型レジスト組成物
JP2005049695A (ja) * 2003-07-30 2005-02-24 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP4411102B2 (ja) * 2003-09-01 2010-02-10 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
WO2005081062A1 (ja) * 2004-02-20 2005-09-01 Tokyo Ohka Kogyo Co., Ltd. パターン形成材料用基材、ポジ型レジスト組成物およびレジストパターン形成方法
US7906268B2 (en) * 2004-03-18 2011-03-15 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP2005275283A (ja) * 2004-03-26 2005-10-06 Fuji Photo Film Co Ltd 電子線、ｅｕｖ光又はｘ線用ポジ型レジスト組成物及びそれを用いたパターン形成方法
KR100864147B1 (ko) * 2004-04-09 2008-10-16 신에쓰 가가꾸 고교 가부시끼가이샤 포지티브형 레지스트 재료 및 패턴 형성 방법
ATE414118T1 (de) * 2004-07-07 2008-11-15 Promerus Llc Lichtempfindliche dielektrische harzzusammensetzungen und ihre verwendungen
JP3946715B2 (ja) * 2004-07-28 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4468119B2 (ja) * 2004-09-08 2010-05-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4837323B2 (ja) * 2004-10-29 2011-12-14 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および化合物
US7947421B2 (en) * 2005-01-24 2011-05-24 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
US7981588B2 (en) * 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
US20060194143A1 (en) * 2005-02-25 2006-08-31 Shinichi Sumida Fluorine-containing polymerizable monomers, fluorine-containing polymer compounds, resist compositions using the same, and patterning process
JP5138157B2 (ja) * 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4813103B2 (ja) 2005-06-17 2011-11-09 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4732038B2 (ja) 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
EP1795960B1 (de) 2005-12-09 2019-06-05 Fujifilm Corporation Positive Resistzusammensetzung, Verfahren zur Musterbildung unter Verwendung der positiven Resistzusammensetzung, Verwendung der positiven Resistzusammensetzung
CN101395189B (zh) 2006-03-31 2013-07-17 Jsr株式会社 含氟聚合物及其精制方法以及感放射线性树脂组合物
JP2008268920A (ja) * 2007-03-28 2008-11-06 Fujifilm Corp ポジ型レジスト組成物およびパターン形成方法
EP1975714A1 (de) 2007-03-28 2008-10-01 FUJIFILM Corporation Positive Resistzusammensetzung und Verfahren zur Strukturformung
JP4621754B2 (ja) * 2007-03-28 2011-01-26 富士フイルム株式会社 ポジ型レジスト組成物およびパターン形成方法
TWI482755B (zh) * 2009-02-23 2015-05-01 Jsr Corp A compound and a method for producing the same, a fluorine atom-containing polymer, and a radiation-sensitive resin composition
KR101305111B1 (ko) * 2010-06-30 2013-09-05 주식회사 동진쎄미켐 레지스트 보호막 형성용 중합체, 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성방법
US8835094B2 (en) * 2010-09-29 2014-09-16 Shin-Etsu Chemical Co., Ltd. Fluoroalcohol, fluorinated monomer, polymer, resist composition and patterning process
JP5282781B2 (ja) * 2010-12-14 2013-09-04 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP5729313B2 (ja) * 2011-01-19 2015-06-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP5783142B2 (ja) * 2011-07-25 2015-09-24 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP5556765B2 (ja) * 2011-08-05 2014-07-23 信越化学工業株式会社 ＡｒＦ液浸露光用化学増幅ポジ型レジスト材料及びパターン形成方法
JP5825248B2 (ja) * 2012-12-12 2015-12-02 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP5825252B2 (ja) * 2012-12-26 2015-12-02 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5821862B2 (ja) * 2013-01-29 2015-11-24 信越化学工業株式会社 ネガ型レジスト材料並びにこれを用いたパターン形成方法
KR102126894B1 (ko) * 2013-03-11 2020-06-25 주식회사 동진쎄미켐 리소그래피용 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성 방법
JP7229149B2 (ja) * 2019-01-31 2023-02-27 信越化学工業株式会社 導電性ポリマー用高分子化合物及びその製造方法

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US469056A (en) 1892-02-16 Louis bredannaz
US2833827A (en) 1955-01-17 1958-05-06 Bayer Ag Tri (3, 5-di lower alkyl-4-hydroxy phenyl)-sulfonium chlorides and method of preparing same
US3902114A (en) 1967-10-20 1975-08-26 Gunther Alich Method of and apparatus for measuring the distance between cooperating rollers of a rolling mill
US3734928A (en) 1970-08-11 1973-05-22 Dow Chemical Co Difunctional iodonium salts of diphenyl oxide and preparation
US3987037A (en) 1971-09-03 1976-10-19 Minnesota Mining And Manufacturing Company Chromophore-substituted vinyl-halomethyl-s-triazines
US3905815A (en) 1971-12-17 1975-09-16 Minnesota Mining & Mfg Photopolymerizable sheet material with diazo resin layer
DE2242106A1 (de) 1972-08-26 1974-03-21 Agfa Gevaert Ag Lichtempfindliches photographisches material
USRE27992E (en) 1973-01-31 1974-04-30 Fig.io
US4069056A (en) 1974-05-02 1978-01-17 General Electric Company Photopolymerizable composition containing group Va aromatic onium salts
GB1512982A (en) 1974-05-02 1978-06-01 Gen Electric Salts
DE2718130C2 (de) 1977-04-23 1979-05-17 Du Pont De Nemours (Deutschland) Gmbh, 4000 Duesseldorf lichtempfindliches Aufzeichnungsmaterial
US4173476A (en) 1978-02-08 1979-11-06 Minnesota Mining And Manufacturing Company Complex salt photoinitiator
US4181531A (en) 1978-04-07 1980-01-01 E. I. Du Pont De Nemours And Company Positive non-silver systems containing nitrofuryldihydropyridine
JPS6053300B2 (ja) 1978-08-29 1985-11-25 富士写真フイルム株式会社 感光性樹脂組成物
DE3166592D1 (en) 1980-07-14 1984-11-15 Akzo Nv Thermosetting coating composition containing a blocked acid catalyst
US4478967A (en) 1980-08-11 1984-10-23 Minnesota Mining And Manufacturing Company Photolabile blocked surfactants and compositions containing the same
US4371605A (en) 1980-12-09 1983-02-01 E. I. Du Pont De Nemours And Company Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates
US4431774A (en) 1981-09-14 1984-02-14 Ciba-Geigy Corporation Process for the curing of stoving lacquers
US4510290A (en) 1982-01-11 1985-04-09 Ciba Geigy Corporation Acid-curable composition containing a masked curing catalyst, and a process for the curing thereof
DE3364186D1 (en) 1982-08-09 1986-07-24 Akzo Nv Thermosetting coating composition containing a blocked acid as catalyst
US4554238A (en) 1984-03-20 1985-11-19 Minnesota Mining And Manufacturing Company Spectrally-sensitized imaging system
JPS60198538A (ja) 1984-03-22 1985-10-08 Toshiba Corp ポジ型レジスト材料
JPS60218309A (ja) 1984-04-16 1985-11-01 Nippon Oil & Fats Co Ltd パ−ル状ヘア−リンス
JPS60239736A (ja) 1984-05-14 1985-11-28 Fuji Photo Film Co Ltd 感光性組成物
JP2525568B2 (ja) 1985-01-18 1996-08-21 富士写真フイルム株式会社 光可溶化組成物
JPS61169837A (ja) 1985-01-22 1986-07-31 Fuji Photo Film Co Ltd 光可溶化組成物
JPS61169835A (ja) 1985-01-22 1986-07-31 Fuji Photo Film Co Ltd 光可溶化組成物
JPS61226746A (ja) 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd 半導体集積回路製造用のスピンコート用レジスト組成物
JPS61226745A (ja) 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd 半導体集積回路製造用のスピンコート用レジスト組成物
EP0199672B1 (de) 1985-04-12 1988-06-01 Ciba-Geigy Ag Oximsulfonate mit reaktiven Gruppen
JPS62123444A (ja) 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
JPH0616174B2 (ja) 1985-08-12 1994-03-02 三菱化成株式会社 ナフトキノンジアジド系化合物及び該化合物を含有するポジ型フオトレジスト組成物
JPH0766185B2 (ja) 1985-09-09 1995-07-19 富士写真フイルム株式会社 感光性組成物
JPH0692509B2 (ja) 1985-12-17 1994-11-16 日本石油株式会社 高強度・高弾性率繊維又はフイルム製造用ポリエチレン溶液の製造法
JPH083630B2 (ja) 1986-01-23 1996-01-17 富士写真フイルム株式会社 感光性組成物
DE3604581A1 (de) 1986-02-14 1987-08-20 Basf Ag 4-acylbenzylsulfoniumsalze, ihre herstellung sowie sie enthaltende photohaertbare gemische und aufzeichnungsmaterialien
DE3604580A1 (de) 1986-02-14 1987-08-20 Basf Ag Haertbare mischungen, enthaltend n-sulfonylaminosulfoniumsalze als kationisch wirksame katalysatoren
JPS62212401A (ja) 1986-03-14 1987-09-18 Fuji Photo Film Co Ltd 光重合性組成物
JPS6334540A (ja) 1986-07-30 1988-02-15 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
JPS6370243A (ja) 1986-09-11 1988-03-30 Fuji Photo Film Co Ltd 感光性組成物
DE3642855C1 (de) 1986-12-16 1988-06-23 Du Pont Deutschland Lichtempfindliches Gemisch
US4760013A (en) 1987-02-17 1988-07-26 International Business Machines Corporation Sulfonium salt photoinitiators
JPH0682188B2 (ja) 1987-03-19 1994-10-19 ザイトロニクス，インコーポレイテツド 紫外線被曝を可視化したフィルム及び紫外線被曝量測定部材
JPH0743536B2 (ja) 1987-05-29 1995-05-15 富士写真フイルム株式会社 感光性組成物
DE3721541A1 (de) 1987-06-30 1989-01-12 Wilfried Dreyfuss Schutzvorrichtung fuer rohrenden
DE3721740A1 (de) 1987-07-01 1989-01-12 Basf Ag Sulfoniumsalze mit saeurelabilen gruppierungen
DE3721741A1 (de) 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
US4846009A (en) 1987-10-21 1989-07-11 Caterpillar Inc. Countershaft transmission
US4933377A (en) 1988-02-29 1990-06-12 Saeva Franklin D Novel sulfonium salts and the use thereof as photoinitiators
CA2002873A1 (en) 1988-11-21 1990-05-21 Franklin Donald Saeva Onium salts and the use thereof as photoinitiators
JPH02161445A (ja) 1988-12-15 1990-06-21 Fujitsu Ltd 可視レーザ記録用感光材料
DE69027799T2 (de) 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
JP2661671B2 (ja) 1989-03-20 1997-10-08 株式会社日立製作所 パタン形成材料とそれを用いたパタン形成方法
IT1233538B (it) 1989-07-25 1992-04-03 Dolomite Spa Scarpone da sci a calzata posteriore
GB8923480D0 (en) 1989-10-18 1989-12-06 Moore John A Improvements relating to hanger support elements
JP2845995B2 (ja) 1989-10-27 1999-01-13 株式会社日立製作所 領域抽出手法
JP2717602B2 (ja) 1990-01-16 1998-02-18 富士写真フイルム株式会社 感光性組成物
DE69104605T2 (de) 1990-02-16 1995-06-08 Ingenjoersfirman R. Frykhult Ab, Stockholm Gerät zum filtrieren von flüssigkeiten.
JPH04164041A (ja) * 1990-10-25 1992-06-09 Toagosei Chem Ind Co Ltd 含フッ素スチレン誘導体
US5296330A (en) 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
US5576143A (en) 1991-12-03 1996-11-19 Fuji Photo Film Co., Ltd. Light-sensitive composition
JP2753921B2 (ja) 1992-06-04 1998-05-20 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
FR2703553B1 (fr) 1993-04-02 1995-05-12 Gec Alsthom Transport Sa Procédé de contrôle actif du bruit produit par un appareil et dispositif de mise en Óoeuvre du procédé.
JP3112229B2 (ja) 1993-06-30 2000-11-27 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3224115B2 (ja) 1994-03-17 2001-10-29 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
EP0691575B1 (de) 1994-07-04 2002-03-20 Fuji Photo Film Co., Ltd. Positiv-photoresistzusammensetzung
JPH0862834A (ja) 1994-08-22 1996-03-08 Mitsubishi Chem Corp フォトレジスト組成物
JPH095988A (ja) 1995-06-21 1997-01-10 Mitsubishi Chem Corp 感放射線性塗布組成物
JP3562599B2 (ja) 1995-08-18 2004-09-08 大日本インキ化学工業株式会社 フォトレジスト組成物
US6593058B1 (en) 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2000067072A1 (en) 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
EP1240554A2 (de) * 1999-11-17 2002-09-18 E.I. Du Pont De Nemours And Company Nitril/fluoroalkohol-polymer enthaltende photoresiste und die damit verbundenen verfahren für die mikrolithographie
US6579658B2 (en) * 2000-02-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
US6531260B2 (en) 2000-04-07 2003-03-11 Jsr Corporation Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition
TW565747B (en) * 2000-09-07 2003-12-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP4190167B2 (ja) * 2000-09-26 2008-12-03 富士フイルム株式会社 ポジ型レジスト組成物
US20050100814A1 (en) 2000-11-29 2005-05-12 Berger Larry L. Bases and surfactants and their use in photoresist compositions for microlithography
JP2005508512A (ja) 2001-03-22 2005-03-31 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
KR100863984B1 (ko) 2001-07-03 2008-10-16 후지필름 가부시키가이샤 포지티브 레지스트 조성물
US7108951B2 (en) 2002-02-26 2006-09-19 Fuji Photo Film Co., Ltd. Photosensitive resin composition

Also Published As

Publication number Publication date
KR20090130838A (ko) 2009-12-24
EP2278398A2 (de) 2011-01-26
KR20040012459A (ko) 2004-02-11
EP1367440A2 (de) 2003-12-03
US6939662B2 (en) 2005-09-06
EP2278399A2 (de) 2011-01-26
KR100947853B1 (ko) 2010-03-18
US20040005512A1 (en) 2004-01-08
EP2278400A2 (de) 2011-01-26
EP2278399B1 (de) 2013-05-15
EP1367440B1 (de) 2011-09-21
EP2278399A3 (de) 2011-02-23
EP2278398A3 (de) 2011-05-18
EP2278397A3 (de) 2011-02-23
EP2278400A3 (de) 2011-03-02
KR100955454B1 (ko) 2010-04-29
EP1367440A3 (de) 2004-06-30
EP2278397A2 (de) 2011-01-26

Similar Documents

Publication Publication Date Title
ATE525676T1 (de) Positiv arbeitende resistzusammensetzung
EP1338922A3 (de) Positiv-Resistzusammensetzung
EP1515186A3 (de) Positiv arbeitende Resistzusammensetzung und Verfahren zur Herstellung von Mustern unter Verwendung dieser Zusammensetzung
EP1319981A3 (de) Positiv arbeitende Resistzusammensetzung
TW200715058A (en) Positive resist composition and pattern-forming method using the same
EP1273970A3 (de) Positivphotoresistzusammensetzung
TW200734822A (en) Positive resist composition and pattern forming method using the same
DE60216992D1 (de) Bildaufzeichnungsmaterial
TW200728922A (en) Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
AR031305A1 (es) Agonistas del receptor alfa activado del proliferador de peroxisomas
EP1341038A3 (de) Photosensitive Harzzusammensetzung
TW200732838A (en) Salt suitable for an acid generator and a chemically amplified resist composition containing the same
MY136433A (en) Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
EP2020616A3 (de) Resistzusammensetzung für einen Elektronen-, Röntgen- oder EUV-Strahl und Verfahren zur Strukturformung damit
ATE521016T1 (de) Verwendung einer positiven resist-zusammensetzung für immersions-lithographie, positive resist- zusammensetzung und immersions-lithographische strukturierungsmethode mit benutzung derselbigen
TW200626631A (en) Photosensitizer, photosensitive acid generating agent, and photocurable composition
TWI255965B (en) Positive photosensitive composition
TW200712777A (en) Positive photosensitive resin composition, uses thereof, and method for forming positive pattern
JP2002049156A5 (de)
JP2003280202A5 (de)
NO20045063L (no) Preparater inneholdende minst ett diformat
ATE386073T1 (de) Positiv arbeitende resistzusammensetzung und verfahren zur herstellung von mustern unter verwendung dieser zusammensetzung.
KR20050074509A (ko) 감방사선성 수지 조성물
ES2093944T3 (es) Composicion cosmetica y/o dermatologica de accion despigmentante que contiene un acido di- o tri-cafeoilquinico o una mezcla de estos.
BR0311699A (pt) Processo para a decomposição de hidroperóxido de cicloexila

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties