JP2002243761A - ウェハープローブ - Google Patents
ウェハープローブInfo
- Publication number
- JP2002243761A JP2002243761A JP2001369651A JP2001369651A JP2002243761A JP 2002243761 A JP2002243761 A JP 2002243761A JP 2001369651 A JP2001369651 A JP 2001369651A JP 2001369651 A JP2001369651 A JP 2001369651A JP 2002243761 A JP2002243761 A JP 2002243761A
- Authority
- JP
- Japan
- Prior art keywords
- contact fingers
- probe
- contact
- support
- tab
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 67
- 238000012360 testing method Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 18
- 238000007689 inspection Methods 0.000 claims description 6
- 238000004377 microelectronic Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000009429 electrical wiring Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241000143950 Vanessa Species 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical group [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06772—High frequency probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49121—Beam lead frame or beam lead device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
- Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
ス素子の高周波試験を行うための、構成が容易な多接点
型プローブを提案する。 【解決手段】 本発明によるプローブは、実質的に剛性
を有する支持部と、前記支持部に支持され、かつ前記支
持部から延在する多数の接触フィンガーとを具え、前記
接触フィンガーを一体的な組立体として配置し、それに
よって前記多数の接触フィンガーを前記支持体に取り付
けた時に所定の配列に維持する。
Description
マイクロエレクトロニクス素子の検査用プローブに関す
るものである。
(DUT)の接点パッドと接触する、間隔を有して離間する
細い探針の列を用いるものである。信号はDUTからもた
らされ、選択したノードにおける電圧および/または電
流は測定装置へ送られる。こうした測定システムで生じ
る問題点は、特に高周波において、探針先端部同士が非
常に近接していることでインダクタンスが発生し、これ
が正確な測定に干渉することがあり得ることである。こ
のインダクタンスはDUTを直接取り囲む領域へのプロー
ブ先端部の独立した部分を制限することにより減少させ
ることが可能であるが、現実的な考察においてはこうし
た設計は困難である。
補償するプローブ構造が開発されている。このような設
計は、Lockwoodらによる米国特許第4,697,143号に例示
されている。Lockwoodらは、共面伝送線を形成するため
にアルミナ基板の下側に形成した接地−信号−接地型配
置の帯状の導体配線を開示する。これら共面伝送線は一
端のDUTパッドから他端の同軸ケーブルまで延在する。
各共面伝送線において関連する一対の接地線は同軸ケー
ブルの外側導体と接続し、中間の信号線は内側導体と接
続する。DUTの各パッドとの信頼性の高い電気的接続を
確立するための耐摩耗性導電材の領域を設けている。各
接地−信号−接地型配線パターンの長手方向の大部分に
亘る疑似マイクロ波エネルギーを吸収するための、フェ
ライトを含有するマイクロ波吸収材層を基板上に取り付
けている。こうした形式の構造と調和して、高周波イン
ピーダンス(例えば50オーム)を試験中の素子上にある
プローブ先端部で発生させることができる。したがっ
て、18GHzまたはそれよりも低い広帯域信号は、各接地
−信号−接地型配線パターンによって形成される共面伝
送線を低損失で通過することが可能となる。
テムは平坦でない表面の効果的な検査には不十分なもの
である。こうした表面は、例えば、DUTのパッドの高さ
が異なっている場合や、微少な寸法の遊離した金属粒子
がDUTの一つのパッド表面に静電気により付着して平坦
でない面の不均一性をもたらす場合や、DUTの面がプロ
ーブ組立体の共面先端部の面に対してわずかに不所望の
傾斜なす時に発生するものである。さらに、探針とDUT
との間の適切な位置合わせには各探針を注意深く配置す
る必要があるが、これは時間のかかる工程である。
国特許第5,506,515号により提案されている。Godshalk
はLockwoodと同様の、同軸ケーブルに取り付けた接地−
信号−接地型フィンガーの配置を開示する。しかしなが
ら、これらのフィンガーは基本的に一体に形成され、接
点側端部で支持タブによって互いに結合している。フィ
ンガーを一旦同軸ケーブルに取り付けると、支持タブは
取り外され、接点フィンガーはDUTとの接触するために
適切に整形される。Godshalkは各フィンガーの相対位置
をまず支持タブによって、次いで同軸ケーブルによって
位置合わせ状態に保持することを開示する。残念ながら
Godshalkの設計は、同軸ケーブルを、緊密に間隔を有し
た、同軸ケーブルの数に、およびそれによって検査にお
いて効率的に利用する接点フィンガーの数に限定して配
置したDUTの幾何学形状に対して近接して配置すること
に限定される。さらに、異なる可撓性を有する多数の同
軸ケーブルに隣接したプローブは、DUTの幾つかのノー
ドとの接触が不十分なものとなり得る。
供給する他のクラスのプローブは、通常、電力バイパス
型プローブとして引用される。プローブ組立体先端部で
のインダクタンスを打ち消すように開発された別の形態
のものは電力バイパス型クォドラントである。この電力
バイパス型クォドラントは、プローブ内部の一体化した
キャパシタまたはレジスタ−キャパシタネットワークを
設けることにより、こうしたインダクタンスを最小化す
る。
Tとの接触をなすための、薄く金またはポリイミドフィ
ルムを被覆したセラミック製フィンガーの列を用いた電
力バイパス型クォドラントプローブを開示する。検査信
号はRCネットワークで構成される電力バイパス型構造を
通して伝達される。DUT近傍の小さな幾何学形状のた
め、キャパシタはプローブ先端部から遠くに位置し、こ
のことは性能を低下させる可能性を有する。セラミック
製接触フィンガーは検査中、特にプローブが接点パッド
上を通過する時に破損し易い。さらに、平坦でないパッ
ドの検査は非常に困難である。なぜならばセラミック製
接触フィンガーは可撓性がないからである。
UTのパッドと接触するブレード列を含むプローブを開示
する。ブレード列は回路板上の伝送線ネットワークから
延在する。必須の電力バイパスを得るためのRCネットワ
ークを回路板上に設け、また幾つかの例では可撓性キャ
パシタを接触ブレード近傍に、あるいは接触ブレード間
に設けている。DUT近傍での限定された幾何学形状のた
め、ブレード間を相互接続するキャパシタの容量は小さ
く、また回路インダクタンスを適切に除去するにはこの
キャパシタだけでは不十分である。その結果、より大き
な容量の値を有する第二のキャパシタをプローブ先端か
ら離れた、空間が利用可能である所に配置している。近
接した間隔を有するブレード間の可撓性キャパシタを用
いたプローブは、限られた機械的な耐久性が保証されな
ければならない。
めの手段】したがって、求められるものは、集積回路ま
たは他のマイクロエレクトロニクス素子の高周波試験を
行うための、構成が容易な多接点型プローブであり、こ
のプローブは周波数の広い範囲に亘る計測のためにプロ
ーブ先端部でのインダクタンスを許容できる水準に低減
するものである。このプローブは十分な耐久性と信頼性
の高い柔軟性および、実質的に平坦でない素子を測定時
間全体に亘って繰り返し検査できるものでなければなら
ない。プローブはさらに、試験を行う素子上での接点と
の位置合わせが容易であり、また多数の接点を同時に検
査することが可能であることが望まれる。
プローブ10を示すものである。ウェハープローブ10は一
体化したチップ組立体12を含み、この組立体は回路板14
に取り付けられている。一体化したチップ組立体12は多
数の接触フィンガー16を具え、これら接触フィンガー
は、試験中の素子(図示せず)のコンパクトな幾何学形
状に適合させるために回路板14から半径方向内向きに延
在する。各接触フィンガーの末端部分17は、試験中の素
子の対応するパッドとの信頼性の高い電気的接触をもた
らすような形状を取る。回路板14は、接触フィンガー16
からレジスタ−キャパシタ(RC)ネットワーク20を通して
ピンコネクタ22へ至る信号経路を規定する電気配線を有
する。測定ケーブル(図示せず)は、ピンコネクタと電
気的に接続することができる。
の個々の部品のような試験中の素子を試験するための適
切な位置に置くために、ウェハープローブステーション
の三孔取り付けフレーム24を通して支持体上に取り付け
るように設計されている。このような適用分野において
は、ウェハーは通常、チャック上面に真空圧下で支持さ
れる。通常、支持部材とチャックとの間の効果的な移動
のためにマイクロメータノブ組立体のようなX-Y-Z位置
決め機構が設けられており、それによってウェハープロ
ーブのチップ組立体を試験中の素子の接点パッドとの加
圧による係合へと導くことができる。
体12は、独立した接触フィンガー16が試験用の端部で共
通の支持タブ26によって連結した単一の素子として形成
されている。独立した接触フィンガー16それぞれは、一
体化したチップ組立体12を回路板14へ取り付けた後に共
通の支持タブ26が分離でき、各接触フィンガーの末端部
分18を試験中の素子の接点パッドを試験するための適切
な位置に配置した状態のままとするような位置決めがな
される。
間隔は、DUTパッドの形状と適合するように選択する。
一体化したチップ組立体12の使用は、接触フィンガー16
が回路板14の各接点と接触している間、この適切な間隔
を維持するために有利に働く。通常、接触フィンガー16
または探針は、適切な位置および間隔を維持するように
各配線と接触して保持され、かつハンダ付けされる。こ
の工程の間、横方向の力が接触フィンガーの末端部分を
変位させる傾向に作用し、接触フィンガーと、これに対
応するDUTのパッドとの間の適切な空間的関係を維持す
ることを困難にする。しかしながら、支持タブ26が取り
付け工程において生じるあらゆる横方向の力を妨げるこ
とにより、接触フィンガー16の末端部分18の適切な横方
向の間隔を維持する。
査するマイクロエレクトロニクス素子のコンパクトな形
状と試験装置および、場合によってはあらゆる電力バイ
パス回路の分散型の形状との間の空間的な変形の改良を
達成する。この改良された空間的な特性は所期の設計と
は対照的な位置にあり、信号は同軸ケーブルを通して伝
達される。単純に内側および外側導体を有する同軸ケー
ブルは、取り付ける接触フィンガーの数を、接地−信号
−接地という配置がなされる3本に制限する。その結
果、接触フィンガーを同軸ケーブルへ取り付ける間の接
触フィンガーの位置決めして保持するために利用する、
あらゆる通常の支持タブもまた、最大3本の接触フィン
ガーを支持することに限定されることとなる。
きパッドが3個以上の場合がある。こうした場合、プロ
ーブの形成には導体を互いに隣接させて配置した多重同
軸ケーブルの使用を必要とし、その使用は、常にプロー
ブ末端部分近傍で利用できる空間を限定してしまうとい
う不都合な工程をもたらす。多重同軸ケーブルの使用は
また、異なるケーブルが異なる可撓性を有するという問
題をも有しており、全てのケーブルを一平面上に並べる
ことを困難なものとし、また接触フィンガーを対応する
各パッドと接触させる際に不均一なプローブ力を生じさ
せる。さらに、多重同軸ケーブルおよび多重支持タブの
使用は慎重に行う必要があり、また接触フィンガーの組
とDUTパッドの形状との間の相対位置の調整に長時間を
要することとなる。もう一つの設計においては、多重同
軸ケーブルおよび単一の支持タブの使用も慎重に行う必
要があり、また同軸ケーブルの相対位置の調整に長時間
を要する。
各問題点に対処する。なぜならば、回路板14は、試験中
にプローブと係合するDUTの各接点パッドのための分離
した配線を含むことができ、図3に示す共通支持タブ26
は4本またはそれ以上の接触フィンガー16を含んでもよ
く、支持タブは各接触フィンガー16を回路板14に強固に
取り付られるまで、各接触フィンガーの末端部分全てを
適切な位置に維持する。回路板14は制御された均一な可
撓性をもたらし、接触フィンガー16がDUTのパッドと接
触したときの行き過ぎ量の均一化のみならず、接触フィ
ンガー16における応力が回路板14の均一な可撓性によっ
て除去されることを確実なものとする。回路板14の可撓
性は、回路板14の材料の選択により制御される。
ままの一体化したチップ組立体12の例を示すものであ
る。接触フィンガー16は通常矩形断面を有し、同じ材料
で構成することが望ましい。ここでは、接触フィンガー
16の材料は、接触フィンガーに対応する接触面が平坦で
ない配置を有するような素子を検査することができるよ
うな高い弾性を可能とする材料から選ぶ。好適な実施形
態においては、接触フィンガーをベリリウム−銅合金(B
eCu)に抵抗損失を低減させるために金めっきしたものか
ら形成する。この材料は、特に金で形成されている接点
パッドの検査に適している。なぜならばBeCuは実質的に
金よりも硬いからである。結局、これは摩耗を最小限に
し、プローブの使用期間における長期間のメンテナンス
フリーをもたらす。
ウムで形成されていれば、接触フィンガー16にはタング
ステンのようなより硬い材料を使用することが望まし
い。ここで再度、接触フィンガー16の摩耗を最小限にす
ることを保証するために、接触フィンガーの材料を接触
パッドの材料よりも実質的に硬いものから選択する。タ
ングステン製接触フィンガーを使用する場合にも、抵抗
損失を低減するために金めっきを施すことが望ましい。
BeCuやタングステンのような材料の使用は、プローブの
繰り返し使用を可能とし、その上、前述したセラミック
製接触フィンガーの使用を通じて生じる壊れ易さを避け
ることとなる。BeCuやタングステンに加えて他の潜在的
な材料も使用できることに留意されたい。さらに、接触
フィンガーを回路板と接触させるための、ハンダ付け以
外の、エポキシまたはその類似物のような多数の潜在的
な技術も存在する。
支持タブ26に取り付けた、単一の一体化させたユニット
として製造する。末端部分18は、その部分での非常に狭
いピッチ(接点と接点との間の間隔)から、それよりも
拡がった形状の回路板14の配線40までの扇形状をなす。
接触フィンガーと回路板との接続をもたらすために、回
路板の露出した配線上にハンダペーストを均一に塗布す
る。その後接触フィンガーは対応する各配線上に正しく
保持され、さらに適切な位置にあるハンダペーストに対
して押圧されるまで下方へ向けられる。ハンダが溶融す
るとき、加熱要素を上方に、接触領域を下方に配置し
て、ハンダのフィレットが各フィンガーと、対応する回
路板の配線との間に好適に形成されるようにすることが
望ましい。
は末端部分に対してわずかに下方へ傾けて保持すること
が望ましい。なぜならば、冷却中に各接触フィンガーが
回路板14と平坦な関係を有することを確実にするためで
ある。この接続工程の間、共通の支持タブによって各接
触フィンガーの横方向の適切な間隔が維持されることに
注意したい。これは、接触フィンガーを横方向に変位さ
せようとするあらゆる力が、接触フィンガーをこれらに
対応する末端部分18で保持する共通の支持タブ26によっ
て打ち消されるからである。
後には、共通の支持タブ26は、もはや必要のないものと
して分離する。なぜならば、回路板14によって接触フィ
ンガーの適切な調整が維持されるからである。接触フィ
ンガー16は、上から見たときに前縁部が見えるように平
坦な接触領域を形成するために、研磨およびラッピング
工程を用いて整形することが望ましい。
板の電気配線40は一様により大きくなる連続的な扇形状
をなし、最終的には図1にピンの組で示すような一つま
たはそれ以上の、通常は配線よりも大きな物理的形状の
コネクタへと達する。回路板14は接地面(図示せず)を
有しても良く、この接地面は、標準的な試験装置の使用
において接地インダクタンスを減少させ、信号配線のイ
ンピーダンスを40〜50オームに制御する。回路板14の使
用はまた、幾何学的なスケールの中間レベルでの配置が
可能な、非常に小さい寸法の表面実装技術(SMT)部品に
対する追加的な使用をも可能とする。
構造は、回路板14の表面上に実装可能な電力バイパス型
アーキテクチャと互換性を有する。好適な実施形態にお
いて、回路板の両面には追加的に空間を利用するために
電力バイパス特性を設けるように使用する。
て組み込むことができるかを示すため、図1および図2は
回路板14の両面を越えて拡がる電力バイパス型アーキテ
クチャを示す。しかしながら、必要に応じて一方の面の
みを用いた完全な電力バイパス構造を設けることが、専
ら実現可能であることに留意したい。図において、4本
の接触フィンガー50,52,54,56を、隣接させて電力供
給線と接地線とが交互になるように配置する。回路板の
底面において、図2に示すように、高周波用金属−絶縁
体−金属(MIM)型キャパシタを、一対の接触フィンガー
によって形成した、隣接する電力供給線と接地線の間に
取り付ける。
と非常に高い自励振動数を有するが、キャパシタンスは
余り大きくない。このことは、低周波数での電力バイパ
スをもたらす可能性を制限する。その結果、相対的に大
きな寸法で有用なキャパシタを、依然として非常に小さ
な物理的寸法を有しているものであっても、回路板の十
分な空間のあるところにさらに配置する。MIMキャパシ
タとSMTキャパシタへ至る長さの配線のインダクタンス
との間で発生し得る"de-Q"または平行な共振を無くすよ
うに、小さな値のSMT抵抗を、このキャパシタと直列に
使用する。
を機能、すなわち接地、信号、電力、その他のプローブ
の各電気的接点を特注することができるように設計して
いる。始めは各接触フィンガーを、接地板を経てSMT部
品および、最終的にはコネクタと接続させる。接地用接
点のプログラミングは接地部との接続を単にそのままに
しておくことを必要とし、一方、他の全ての機能のため
に、この小さな回路板配線を例えば鋭利な刃もしくはレ
ーザで切断する。バイパスした電力供給線をプログラム
するとき、SMT部品との接続はそのまま残り、一方接地
部への短絡配線は切断される。
ンは、試験中の素子に対して傾斜した回路板14を含むこ
とが望ましい。接触フィンガー16の大部分は同様に、試
験中の素子を適切に試験するように整形した末端部分18
を回路板14の面に合わせることが望ましい。この傾斜し
た設計は、試験中に回路板14が試験中の素子から離れて
間隔を有することを可能とし、一方、同時に接触フィン
ガー16を、性能向上のためにインダクタンスを最小化す
るように短絡させることを可能とする。そうでなけれ
ば、接触フィンガーは回路板に対して傾斜して取り付け
る必要があり、多くの場合、これは効果的な試験のため
に、より長い接触フィンガーを必要とするからである。
形態の上面図である。
である。
り付けたプローブチップを拡大して示す図である。
ターンを示す図であり、図4Aは電力バイパス特性を含む
例示的なプローブ上面のパターンを示し、図4Bは電力バ
イパス特性を含む例示的なプローブ底面のパターンを示
すものである。
Claims (22)
- 【請求項1】 (a)実質的に剛性を有する支持部と、 (b)前記支持部に支持され、かつ前記支持部から延在す
る多数の接触フィンガーと、を具え、前記接触フィンガ
ーを一体的な組立体として配置し、それによって前記多
数の接触フィンガーを前記支持体に取り付けた時に所定
の配列に維持するプローブ。 - 【請求項2】 前記多数の接触フィンガーが前記支持部
から半径方向外向きに延在する請求項1記載のプロー
ブ。 - 【請求項3】 前記接触フィンガーの配置を試験中の素
子の接触パッドの幾何学的配置に適合させた請求項2記
載のプローブ。 - 【請求項4】 前記支持部が前記接触フィンガーと相互
接続するレジスタ−キャパシタネットワークを含む請求
項1記載のプローブ。 - 【請求項5】 前記支持部が平坦な回路板である請求項
1記載のプローブ。 - 【請求項6】 前記一体的な組立体が前記多数の接点フ
ィンガーの端部近傍にあるタブを含み、このタブが前記
接点フィンガーを前記所定の間隔に維持する請求項1記
載のプローブ。 - 【請求項7】 前記タブを前記接点フィンガーによる検
査前に取り外す請求項6記載のプローブ。 - 【請求項8】 前記剛性を有する支持部が前記各接点フ
ィンガーのためのそれぞれの配線を含む請求項1記載の
プローブ。 - 【請求項9】 前記各配線が試験装置と相互接続するの
に適合させたコネクタと電気的に相互接続する請求項8
記載のプローブ。 - 【請求項10】 前記タブの取り外しが前記多数の接点
フィンガーの各端部を所定の位置に維持する請求項7記
載のプローブ。 - 【請求項11】 前記多数の接点フィンガーの数が3本
よりも多い請求項1記載のプローブ。 - 【請求項12】 (a)実質的に剛性を有する支持部を設
ける工程と、 (b)多数の接点フィンガーを含む一体的な組立体を設
け、それによって多数の接点フィンガーを所定の配列に
維持させる工程と、 (c)前記多数の接点フィンガーを前記支持部に取り付け
る工程と、を含むプローブの組み立て方法。 - 【請求項13】 前記多数の接触フィンガーが前記支持
部から半径方向外向きに延在させる請求項12記載の方
法。 - 【請求項14】 前記接触フィンガーの配置を試験中の
素子の接触パッドの幾何学的配置に適合させる請求項1
3記載の方法。 - 【請求項15】 前記支持部が前記接触フィンガーと相
互接続するレジスタ−キャパシタネットワークを含む請
求項12記載の方法。 - 【請求項16】 前記支持部が平坦な回路板である請求
項12記載の方法。 - 【請求項17】 前記一体的な組立体が前記多数の接点
フィンガーの端部近傍にあるタブを含み、このタブが前
記接点フィンガーを前記所定の間隔に維持する請求項1
2記載の方法。 - 【請求項18】 前記タブを前記接点フィンガーによる
検査前に取り外す請求項17記載の方法。 - 【請求項19】 前記剛性を有する支持部が前記各接点
フィンガーのためのそれぞれの配線を含む請求項12記
載の方法。 - 【請求項20】 前記各配線が試験装置と相互接続する
のに適合させたコネクタと電気的に相互接続する請求項
19記載の方法。 - 【請求項21】 前記タブの取り外しが前記多数の接点
フィンガーの各端部を所定の位置に維持する請求項18
記載の方法。 - 【請求項22】 前記多数の接点フィンガーの数が3本
よりも多い請求項12記載の方法。
Applications Claiming Priority (2)
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|---|---|---|---|
| US25118600P | 2000-12-04 | 2000-12-04 | |
| US60/251186 | 2000-12-04 |
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| JP2001369651A Pending JP2002243761A (ja) | 2000-12-04 | 2001-12-04 | ウェハープローブ |
| JP2007330626A Pending JP2008122403A (ja) | 2000-12-04 | 2007-12-21 | ウェハープローブの組み立て方法 |
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| Country | Link |
|---|---|
| US (6) | US7233160B2 (ja) |
| JP (2) | JP2002243761A (ja) |
| KR (1) | KR100795127B1 (ja) |
| DE (2) | DE10143173A1 (ja) |
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- 2001-09-24 KR KR1020010058928A patent/KR100795127B1/ko not_active Expired - Fee Related
- 2001-11-19 US US09/997,501 patent/US7233160B2/en not_active Expired - Fee Related
- 2001-12-04 JP JP2001369651A patent/JP2002243761A/ja active Pending
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2007
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- 2007-10-18 US US11/975,176 patent/US7495461B2/en not_active Expired - Fee Related
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2010
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| JP2025073097A (ja) * | 2023-10-25 | 2025-05-12 | ウィズメムズ カンパニー リミテッド | 被検査体の電気的特性をプロービングするプローブカード及びそれを製造する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100251545A1 (en) | 2010-10-07 |
| US20070200580A1 (en) | 2007-08-30 |
| KR100795127B1 (ko) | 2008-01-17 |
| US7761983B2 (en) | 2010-07-27 |
| DE10143173A1 (de) | 2002-06-06 |
| US20080042677A1 (en) | 2008-02-21 |
| KR20020044048A (ko) | 2002-06-14 |
| US7688097B2 (en) | 2010-03-30 |
| US20020075019A1 (en) | 2002-06-20 |
| US7233160B2 (en) | 2007-06-19 |
| US7495461B2 (en) | 2009-02-24 |
| US20080045028A1 (en) | 2008-02-21 |
| US7456646B2 (en) | 2008-11-25 |
| DE20114544U1 (de) | 2002-02-21 |
| US20080042678A1 (en) | 2008-02-21 |
| JP2008122403A (ja) | 2008-05-29 |
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